Document
Schottky Barrier Diodes
RB160VA-40FH
Applications General rectification
Dimensions (Unit : mm)
1.3±0.05
0.1 7±0.1 0.05
Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 3) High reliability.
Construction Silicon epitaxial planar
0.8±0 .05
ROHM : TUMD2
0.6±0 .2 0.1
dot (year week factory) + day
1.9±0 .1 2.5±0.2
0.8 0.5 2.0
AEC-Q101 Qualified
Land size figure (Unit : mm)
1.1
TUMD2
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1 0.05
0.25±0.05
1.75±0.1
3.5±0.05 2.8±0.05
8.0±0.2 2.8±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2 0
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current
VRM VR Io
Forward current surge peak (60Hz・1cyc) Forward current surge peak(t=100μs・1cyc) Junction temperature
IFSM IFSM Tj
Storage temperature
Tstg
Limits
40 40 1 5 10 150 -40 to +150
Unit V V A A A ℃ ℃
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Forward voltage Reverse current
VF - 0.50 IR - 1.5
Max. 0.55 50
Unit Conditions
V IF=700mA μA VR=40V
0.9±0.08
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.06 - Rev.D
RB160VA-40FH
FORWARD CURRENT:IF(A)
Electrical characteristic curves (Ta=25C)
1 Ta=150℃
Ta=125℃ 0.1 Ta=75℃
Ta=25℃
0.01 Ta=-25℃
0.001 0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
600
REVERSE CURRENT:IR(uA)
100000 10000 1000 100 10 1 0.1 0.01 0.001 0
Ta=150℃ Ta=125℃
Ta=75℃ Ta=25℃ Ta=-25℃
10 20 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
40
FORWARD VOLTAGE:VF(mV)
530
Ta=25℃
520
IF=0.7A n=30pcs
510
500
490 AVE:501.9mV
480
VF DISPERSION MAP
REVERSE CURRENT:IR(uA)
30 Ta=25℃
25 VR=40V n=30pcs
20
15
10 5 AVE:1.5772uA
0
IR DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Data Sheet
1000 100
f=1MH
10
1
0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
30
200 190 180 170 160 150 140 130 120 110 100
Ct DISPERSION MAP
20 15 10
5 0
1000
IFSM DISRESION MAP
100
10 0.001
0.1 10
TIME:t(s) Rth-t CHARACTERISTICS
1000
FORWARD POWER DISSIPATION:Pf(W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
20
15
10
5
0 1 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
1
0.9 D=1/2 0.8
0.7 Sin(θ=180) 0.6
0.5
DC
0.4
0.3
0.2
0.1
0
0 0.5 1 1.5 AVERAGE RECTIFIED
FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
2
REVERSE POWER DISSIPATION:PR (W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
30 25 20 15 10
5 0
1
10
TIME:t(ms) IFSM-t CHARACTERISTICS
100
0.3
0.2 Sin (θ=180)
D=1/2 0.1 DC
0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.06 - Rev.D
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
RB160VA-40FH
2 1.5 D=1/2 DC
1
0A Io
0V t
VR D=t/T
VR=20V
T Tj=150℃
0.5 Sin(θ=180)
0 0 25 50 75 100 125 150
AMBIE.