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RB160VA-40FH Dataheets PDF



Part Number RB160VA-40FH
Manufacturers Rohm
Logo Rohm
Description Schottky Barrier Diode
Datasheet RB160VA-40FH DatasheetRB160VA-40FH Datasheet (PDF)

Schottky Barrier Diodes RB160VA-40FH Applications General rectification Dimensions (Unit : mm) 1.3±0.05 0.1 7±0.1    0.05 Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 3) High reliability. Construction Silicon epitaxial planar 0.8±0 .05 ROHM : TUMD2 0.6±0 .2     0.1 dot (year week factory) + day 1.9±0 .1 2.5±0.2 0.8 0.5 2.0 AEC-Q101 Qualified  Land size figure (Unit : mm) 1.1 TUMD2 Structure  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1       0.05 .

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Schottky Barrier Diodes RB160VA-40FH Applications General rectification Dimensions (Unit : mm) 1.3±0.05 0.1 7±0.1    0.05 Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 3) High reliability. Construction Silicon epitaxial planar 0.8±0 .05 ROHM : TUMD2 0.6±0 .2     0.1 dot (year week factory) + day 1.9±0 .1 2.5±0.2 0.8 0.5 2.0 AEC-Q101 Qualified  Land size figure (Unit : mm) 1.1 TUMD2 Structure  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1       0.05 0.25±0.05 1.75±0.1 3.5±0.05 2.8±0.05 8.0±0.2 2.8±0.05 1.43±0.05 4.0±0.1 φ1.0±0.2      0 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz・1cyc) Forward current surge peak(t=100μs・1cyc) Junction temperature IFSM IFSM Tj Storage temperature Tstg Limits 40 40 1 5 10 150 -40 to +150 Unit V V A A A ℃ ℃ Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Forward voltage Reverse current VF - 0.50 IR - 1.5 Max. 0.55 50 Unit Conditions V IF=700mA μA VR=40V 0.9±0.08 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.06 - Rev.D RB160VA-40FH   FORWARD CURRENT:IF(A) Electrical characteristic curves (Ta=25C) 1 Ta=150℃ Ta=125℃ 0.1 Ta=75℃ Ta=25℃ 0.01 Ta=-25℃ 0.001 0 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 600 REVERSE CURRENT:IR(uA) 100000 10000 1000 100 10 1 0.1 0.01 0.001 0 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 10 20 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 40 FORWARD VOLTAGE:VF(mV) 530 Ta=25℃ 520 IF=0.7A n=30pcs 510 500 490 AVE:501.9mV 480 VF DISPERSION MAP REVERSE CURRENT:IR(uA) 30 Ta=25℃ 25 VR=40V n=30pcs 20 15 10 5 AVE:1.5772uA 0 IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Data Sheet 1000 100 f=1MH 10 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 200 190 180 170 160 150 140 130 120 110 100 Ct DISPERSION MAP 20 15 10 5 0 1000 IFSM DISRESION MAP 100 10 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 15 10 5 0 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 0.9 D=1/2 0.8 0.7 Sin(θ=180) 0.6 0.5 DC 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 25 20 15 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.3 0.2 Sin (θ=180) D=1/2 0.1 DC 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.06 - Rev.D AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) RB160VA-40FH   2 1.5 D=1/2 DC 1 0A Io 0V t VR D=t/T VR=20V T Tj=150℃ 0.5 Sin(θ=180) 0 0 25 50 75 100 125 150 AMBIE.


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