Barrier Diode. RB160VA-40FH Datasheet

RB160VA-40FH Diode. Datasheet pdf. Equivalent

Part RB160VA-40FH
Description Schottky Barrier Diode
Feature Schottky Barrier Diodes RB160VA-40FH Applications General rectification Dimensions (Unit : mm) .
Manufacture Rohm
Datasheet
Download RB160VA-40FH Datasheet

Schottky Barrier Diodes RB160VA-40FH Applications General RB160VA-40FH Datasheet
Recommendation Recommendation Datasheet RB160VA-40FH Datasheet





RB160VA-40FH
Schottky Barrier Diodes
RB160VA-40FH
Applications
General rectification
Dimensions (Unit : mm)
1.3±0.05
0.1 7±0.1
   0.05
Features
1) Small mold type. (TUMD2)
2) Low VF, Low IR.
3) High reliability.
Construction
Silicon epitaxial planar
0.8±0 .05
ROHM : TUMD2
0.6±0 .2
    0.1
dot (year week factory) + day
AEC-Q101 Qualified
Land size figure (Unit : mm)
1.1
TUMD2
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
      0.05
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
     0
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
Forward current surge peak 60Hz1cyc
Forward current surge peakt=100μs1cyc
Junction temperature
IFSM
IFSM
Tj
Storage temperature
Tstg
Limits
40
40
1
5
10
150
-40 to +150
Unit
V
V
A
A
A
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Forward voltage
Reverse current
VF - 0.50
IR - 1.5
Max.
0.55
50
Unit Conditions
V IF=700mA
μA VR=40V
0.9±0.08
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.06 - Rev.D



RB160VA-40FH
RB160VA-40FH
 
Electrical characteristic curves (Ta=25C)
1
Ta=150℃
Ta=125℃
0.1 Ta=75℃
Ta=25℃
0.01 Ta=-25℃
0.001
0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
600
100000
10000
1000
100
10
1
0.1
0.01
0.001
0
Ta=150℃ Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10 20 30
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
40
530
Ta=25℃
520
IF=0.7A
n=30pcs
510
500
490 AVE:501.9mV
480
VF DISPERSION MAP
30
Ta=25℃
25 VR=40V
n=30pcs
20
15
10
5 AVE:1.5772uA
0
IR DISPERSION MAP
Data Sheet
1000
100
f=1MH
10
1
0 10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
200
190
180
170
160
150
140
130
120
110
100
Ct DISPERSION MAP
20
15
10
5
0
1000
IFSM DISRESION MAP
100
10
0.001
0.1 10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
20
15
10
5
0
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
0.9 D=1/2
0.8
0.7 Sin(θ=180)
0.6
0.5
DC
0.4
0.3
0.2
0.1
0
0 0.5 1 1.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2
30
25
20
15
10
5
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0.3
0.2
Sin (θ=180)
D=1/2
0.1 DC
0
0 10 20 30 40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.06 - Rev.D





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