RB160VA-40

3.5±0.05NotNeRewcDoemsimgen 2.8±0.05 8.0±0.2 2.8±0.05 Schottky Barrier Diode RB160VA-40 lApplications General rectification lFeatures 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 3) High reliability. lDimensions (Unit : mm) 1.3±0.05 0.17±0.1 　　 0.05 lConstruction Silicon epitaxial planar 0.8±0.05 ROHM : TUMD2 0.6±0.2 　　　 0.1 dot (year week factory) + day 1.9±0.1r 2.5±0.2 0.8 0.5 2.0 Data Sheet l Land size figure (Unit : mm) 1.1 TUMD2 lStructure l Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.1 　　　　　 0.05 0.25±0.05 1.75±0.1nsded fo 1.43±0.05 4.0±0.1 φ 1.0±0.2 　　　　　0 0.9±0.08 lAbsolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Forward current surge peak（t=100μs・1cyc） Junction temperature VRM VR Io IFSM IFSM Tj Storage temperature Tstg Limits 40 40 1 5 10 150 -40 to +150 Unit V V A A A ℃ ℃ lElectrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Forward voltage VF 0.42 0.50 0.55 Reverse current IR - 1.5 50 Unit Conditions V IF=700mA μA VR=40V www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/3 2014.12 - Rev.E RB160VA-40 lElectrical characteristic curves (Ta=25C) Data Sheet NotNeRewcDoemsimgennsded for www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/3 2014.12 - Rev.E RB160VA-40 Data Sheet NotNeRewcDoemsimgennsded for www.rohm.com © 2014 ROHM Co., Ltd. All right...