RB520S-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for low current rectification and high speed switching applica...
RB520S-30
SILICON EPITAXIAL PLANAR
SCHOTTKY BARRIER DIODE
for low current rectification and high speed switching applications
Features Extremely small surface mounting type High reliability
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
B
Top View Marking Code: "B" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V
Note: ESD sensitive product handling required.
Symbol
VR IO IFSM Tj Ts
Value 30 200 1 125
- 40 to + 125
Unit V mA A OC OC
Symbol VF IR
Max. 0.6 1
Unit V µA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
RB520S-30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
A C
RB520S-30
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
∠ ALL ROUND
HE D
A
SOD-523
E bp
UNIT A b p C D E HE V
mm
0.70 0.60
0.4 0.135 1.25 0.85 0.3 0.127 1.15 0.75
1.7 1.5
0.1
∠
5O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
...