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RB520SM-40FH Dataheets PDF



Part Number RB520SM-40FH
Manufacturers Rohm
Logo Rohm
Description Schottky Barrier Diode
Datasheet RB520SM-40FH DatasheetRB520SM-40FH Datasheet (PDF)

Schottky Barrier Diode RRBB52502S0SMM-4-04F0H lApplications Small current rectification lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 Data Sheet AEC-Q101 Qualified lLand size figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 0.6 1.7 lFeatures 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability lConstruction Silicon epitaxial 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.6±0.1 EMD2 lStructure lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C.

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Schottky Barrier Diode RRBB52502S0SMM-4-04F0H lApplications Small current rectification lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 Data Sheet AEC-Q101 Qualified lLand size figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 0.6 1.7 lFeatures 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability lConstruction Silicon epitaxial 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.6±0.1 EMD2 lStructure lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz・1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 45 40 200 1 150 -40 to +150 Unit V V mA A °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage VF1 VF2 Reverse current IR1 IR2 Min. - Typ. - Max. 0.39 0.55 1 10 Unit Conditions V IF=10mA V IF=100mA μA VR=10V μA VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A RB520SM-40FH   Data Sheet FORWARD CURRENT:IF(mA) 1000 100 Ta=125℃ 10 Ta=75℃ Ta=25℃ 1 0.1 0 Ta=-25℃ 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT:IR(μA) 1000 100 10 1 0.1 0.01 0.001 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 40 510 Ta=25℃ 500 IF=100mA n=30pcs 490 480 AVE:491.2mV 470 460 VF DISPERSION MAP REVERSE CURRENT:IR(nA) 1000 900 800 700 600 500 400 300 200 100 0 Ta=25℃ VR=10V n=30pcs AVE:67.0nA IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 f=1MHz 10 1 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 50 45 Ta=25℃ f=1MHz 40 VR=0V 35 n=10pcs 30 25 20 15 AVE:23.2pF 10 5 0 Ct DISPERSION MAP FORWARD VOLTAGE : VF(mV) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 Ifsm 1cyc 25 8.3ms 20 15 10 AVE:5.60A 5 0 IFSM DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 15 Ifsm 8.3ms 8.3ms 1cyc 10 5 5 Ifsm t 0 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 FORWARD POWER DISSIPATION:Pf(W) 10000 Mounted on epoxy board 1000 Rth(j-a) 100 Rth(j-c) 0.3 D=1/2 0.2 Sin(θ=180) 0.1 DC 10 0.001 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0.1 0.2 0.3 0.4 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:PR (W) 0.03 0.025 0.02 DC 0.015 0.01 0.005 D=1/2 Sin(θ=180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RB520SM-40FH   AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.5 0.4 DC 0.3 D=1/2 0.2 0A Io 0V t VR D=t/T T TVjR==12500V℃ 0.1 Sin(θ=180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) 0A Io 0V t VR D=t/T 0.5 T TVjR==12500V℃ 0.4 DC 0.3 D=1/2 0.2 0.1 Sin(θ=180) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A .


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