Document
Schottky Barrier Diode
RRBB52502S0SMM-4-04F0H
lApplications Small current rectification
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
Data Sheet
AEC-Q101 Qualified
lLand size figure (Unit : mm) 0.8
1.2±0.05 1.6±0.1
0.6 1.7
lFeatures 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability
lConstruction Silicon epitaxial
0.3±0.05
ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79
dot (year week factory)
0.6±0.1
EMD2 lStructure
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current
VRM VR Io
Forward current surge peak (60Hz・1cyc)
Junction temperature
IFSM Tj
Storage temperature
Tstg
Limits 45 40 200 1 150
-40 to +150
Unit V V mA A °C °C
lElectrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
VF1 VF2
Reverse current
IR1 IR2
Min. -
Typ. -
Max. 0.39 0.55
1 10
Unit Conditions V IF=10mA V IF=100mA μA VR=10V μA VR=40V
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.06 - Rev.A
RB520SM-40FH
Data Sheet
FORWARD CURRENT:IF(mA)
1000
100 Ta=125℃
10 Ta=75℃
Ta=25℃ 1
0.1 0
Ta=-25℃ 100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
REVERSE CURRENT:IR(μA)
1000 100 10 1 0.1 0.01
0.001 0
Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃
10 20 30 REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
40
510
Ta=25℃
500
IF=100mA n=30pcs
490
480 AVE:491.2mV 470
460 VF DISPERSION MAP
REVERSE CURRENT:IR(nA)
1000 900 800 700 600 500 400 300 200 100 0
Ta=25℃ VR=10V n=30pcs
AVE:67.0nA
IR DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100 f=1MHz
10
1 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
50 45 Ta=25℃
f=1MHz 40 VR=0V 35 n=10pcs 30 25 20 15 AVE:23.2pF 10
5 0
Ct DISPERSION MAP
FORWARD VOLTAGE : VF(mV)
PEAK SURGE FORWARD CURRENT:IFSM(A)
30 Ifsm 1cyc
25 8.3ms
20
15
10 AVE:5.60A 5
0 IFSM DISPERSION MAP
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
10 15
Ifsm
8.3ms 8.3ms 1cyc
10
5
5
Ifsm t
0 1 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
0 0.1
1 10
TIME:t(ms) IFSM-t CHARACTERISTICS
100
FORWARD POWER DISSIPATION:Pf(W)
10000
Mounted on epoxy board
1000
Rth(j-a)
100 Rth(j-c)
0.3
D=1/2 0.2
Sin(θ=180) 0.1
DC
10 0.001
0.01 0.1 1 10 100
TIME:t(s) Rth-t CHARACTERISTICS
1000
0 0 0.1 0.2 0.3 0.4 0.5
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER DISSIPATION:PR (W)
0.03
0.025
0.02 DC
0.015 0.01
0.005
D=1/2 Sin(θ=180)
0 0 10 20 30
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
40
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
RB520SM-40FH
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.5
0.4 DC
0.3 D=1/2
0.2
0A Io
0V t
VR D=t/T
T TVjR==12500V℃
0.1 Sin(θ=180)
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta)
0A Io
0V t
VR D=t/T
0.5 T TVjR==12500V℃
0.4 DC
0.3 D=1/2
0.2
0.1 Sin(θ=180)
0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc)
Data Sheet
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
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