Trench IGBT. RGT30NS65D Datasheet

RGT30NS65D IGBT. Datasheet pdf. Equivalent

Part RGT30NS65D
Description Field Stop Trench IGBT
Feature RGT30NS65D 650V 15A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 15A .
Manufacture Rohm
Datasheet
Download RGT30NS65D Datasheet

RGT30NS65D 650V 15A Field Stop Trench IGBT Data Sheet VCES RGT30NS65D Datasheet
Recommendation Recommendation Datasheet RGT30NS65D Datasheet





RGT30NS65D
RGT30NS65D
650V 15A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
15A
1.65V
133W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
LPDS / TO-262
(2)
(1)
(3)
lInner Circuit
(2)
*1
(1)
(3)
(1)(2)(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
General Inverter
lPackaging Specifications
Packaging
Reel Size (mm)
Taping / Tube
330 / -
UPS
Power Conditioner
Tape Width (mm)
24 / -
Type
Basic Ordering Unit (pcs) 1,000 / 1,000
Welder
Packing code
TL / C9
Marking
RGT30NS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
VCES
650
Gate - Emitter Voltage
VGES
30
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
30
15
45
26
15
45
133
66
Operating Junction Temperature
Tj -40 to +175
Storage Temperature
*1 Pulse width limited by Tjmax.
Tstg -55 to +175
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
2015.11 - Rev.C



RGT30NS65D
RGT30NS65D
lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 1.12 °C/W
- - 2.86 °C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 10.0mA 5.0
IC = 15A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
-
-
6.0
1.65
2.15
7.0
2.1
-
V
V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
2015.11 - Rev.C





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