Trench IGBT. RGT40NS65D Datasheet

RGT40NS65D IGBT. Datasheet pdf. Equivalent

Part RGT40NS65D
Description Field Stop Trench IGBT
Feature RGT40NS65D 650V 20A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 20A .
Manufacture Rohm
Datasheet
Download RGT40NS65D Datasheet

RGT40NS65D 650V 20A Field Stop Trench IGBT Data Sheet VCES RGT40NS65D Datasheet
Recommendation Recommendation Datasheet RGT40NS65D Datasheet





RGT40NS65D
RGT40NS65D
650V 20A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
20A
1.65V
161W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
LPDS (TO-263S)
(2)
(1)
(3)
lInner Circuit
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
General Inverter
lPackaging Specifications
Packaging
Reel Size (mm)
Taping
330
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
24
1,000
Welder
Taping Code
TL
Marking
RGT40NS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Diode Forward Current
Diode Pulsed Forward Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
40
20
60
35
20
60
161
70
-40 to +175
-55 to +175
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.A



RGT40NS65D
RGT40NS65D
lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 0.93 °C/W
- - 2.12 °C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 13.3mA 5.0
IC = 20A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
-
-
6.0
1.65
2.15
7.0
2.1
-
V
V
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/11
2014.05 - Rev.A





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)