Trench IGBT. RGT50TS65D Datasheet

RGT50TS65D IGBT. Datasheet pdf. Equivalent

Part RGT50TS65D
Description Field Stop Trench IGBT
Feature RGT50TS65D 650V 25A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 25A 1.
Manufacture Rohm
Datasheet
Download RGT50TS65D Datasheet

RGT50TS65D 650V 25A Field Stop Trench IGBT Datasheet VCES RGT50TS65D Datasheet
Recommendation Recommendation Datasheet RGT50TS65D Datasheet





RGT50TS65D
RGT50TS65D
650V 25A Field Stop Trench IGBT
Datasheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
25A
1.65V
174W
Features
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
Outline
TO-247N
Inner Circuit
(1)(2)(3)
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
Applications
General Inverter
UPS
Power Conditioner
Welder
Packaging Specifications
Packaging
Tube
Reel Size (mm)
-
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
Packing code
C11
Marking
RGT50TS65D
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
48
25
75
35
20
75
174
87
40 to +175
55 to +175
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
2015.10 - Rev.C



RGT50TS65D
RGT50TS65D
Thermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 0.86 °C/W
- - 2.28 °C/W
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 17.5mA 5.0
IC = 25A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
-
-
6.0
1.65
2.15
7.0
2.1
-
V
V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
2015.10 - Rev.C





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