Trench IGBT. RGT60TS65D Datasheet

RGT60TS65D IGBT. Datasheet pdf. Equivalent

Part RGT60TS65D
Description Field Stop Trench IGBT
Feature RGT60TS65D 650V 30A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 30A 1.
Manufacture Rohm
Datasheet
Download RGT60TS65D Datasheet

RGT60TS65D 650V 30A Field Stop Trench IGBT Datasheet VCES RGT60TS65D Datasheet
Recommendation Recommendation Datasheet RGT60TS65D Datasheet





RGT60TS65D
RGT60TS65D
650V 30A Field Stop Trench IGBT
Datasheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
30A
1.65V
194W
Features
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
Outline
TO-247N
Inner Circuit
(1)(2)(3)
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
Applications
General Inverter
UPS
Power Conditioner
Welder
Packaging Specifications
Packaging
Tube
Reel Size (mm)
-
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
Packing code
C11
Marking
RGT60TS65D
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
55
30
90
40
20
90
194
97
40 to +175
55 to +175
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
2015.10 - Rev.C



RGT60TS65D
RGT60TS65D
Thermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 0.77 °C/W
- - 2.00 °C/W
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 21.0mA 5.0
IC = 30A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
-
-
6.0
1.65
2.15
7.0
2.1
-
V
V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
2015.10 - Rev.C





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