RGT60TS65D

RGT60TS65D 650V 30A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 30A 1.65V 194W Features 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) Outline TO-247N Inner Circuit (1)(2)(3) (2) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant Applications General Inverter UPS Power Conditioner Welder Packaging Specifications Packaging Tube Reel Size (mm) - Tape Width (mm) Type Basic Ordering Unit (pcs) 450 Packing code C11 Marking RGT60TS65D Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C VCES VGES IC IC ICP*1 IF IF IFP*1 PD PD Tj Tstg 650 30 55 30 90 40 20 90 194 97 40 to +175 55 to +175 Unit V V A A A A A A W W °C °C www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 2015.10 - Rev.C RGT60TS65D Thermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Typ. Max. Unit - - 0.77 °C/W - - 2.00 °C...