Trench IGBT. RGT80TS65D Datasheet

RGT80TS65D IGBT. Datasheet pdf. Equivalent

Part RGT80TS65D
Description Field Stop Trench IGBT
Feature RGT80TS65D 650V 40A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 40A .
Manufacture Rohm
Datasheet
Download RGT80TS65D Datasheet

RGT80TS65D 650V 40A Field Stop Trench IGBT Data Sheet VCES RGT80TS65D Datasheet
Recommendation Recommendation Datasheet RGT80TS65D Datasheet





RGT80TS65D
RGT80TS65D
650V 40A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
40A
1.65V
234W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
TO-247N
lInner Circuit
(1)(2)(3)
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
General Inverter
lPackaging Specifications
Packaging
Reel Size (mm)
Tube
-
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
Welder
Taping Code
C11
Marking
RGT80TS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Diode Forward Current
Diode Pulsed Forward Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
70
40
120
40
20
120
234
117
-40 to +175
-55 to +175
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.B



RGT80TS65D
RGT80TS65D
lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 0.64 °C/W
- - 2.00 °C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 27.6mA 5.0
IC = 40A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
-
-
6.0
1.65
2.15
7.0
2.1
-
V
V
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/11
2014.05 - Rev.B





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