Trench IGBT. RGTH00TS65D Datasheet

RGTH00TS65D IGBT. Datasheet pdf. Equivalent

Part RGTH00TS65D
Description Field Stop Trench IGBT
Feature RGTH00TS65D 650V 50A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 50A .
Manufacture Rohm
Datasheet
Download RGTH00TS65D Datasheet

RGTH00TS65D 650V 50A Field Stop Trench IGBT Datasheet VCES RGTH00TS65D Datasheet
Recommendation Recommendation Datasheet RGTH00TS65D Datasheet





RGTH00TS65D
RGTH00TS65D
650V 50A Field Stop Trench IGBT
Datasheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
50A
1.6V
277W
Features
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
Outline
TO-247N
Inner Circuit
(1)(2)(3)
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
Applications
PFC
UPS
Power Conditioner
IH
Packaging Specifications
Packaging
Tube
Reel Size (mm)
-
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
Packing code
C11
Marking
RGTH00TS65D
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
85
50
200
50
30
200
277
138
40 to +175
55 to +175
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
2015.10 - Rev.C



RGTH00TS65D
RGTH00TS65D
Thermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 0.54 °C/W
- - 1.42 °C/W
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 34.7mA 4.5
IC = 50A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
-
-
- 200 nA
5.5 6.5
V
1.6 2.1
2.1 -
V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
2015.10 - Rev.C





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