Field Stop Trench IGBT
RGTH80TS65
650V 40A Field Stop Trench IGBT
Datasheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 40A 1.6V 234W
Features ...
Description
RGTH80TS65
650V 40A Field Stop Trench IGBT
Datasheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 40A 1.6V 234W
Features 1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Pb - free Lead Plating ; RoHS Compliant
Outline
TO-247N
Inner Circuit
(2)
(1)(2)(3)
(1)
(1) Gate (2) Collector (3) Emitter
(3)
Applications PFC UPS Power Conditioner IH
Packaging Specifications Packaging
Tube
Reel Size (mm)
-
Tape Width (mm) Type
Basic Ordering Unit (pcs)
450
Packing code
C11
Marking
RGTH80TS65
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current Pulsed Collector Current
TC = 25°C TC = 100°C
Power Dissipation Operating Junction Temperature
TC = 25°C TC = 100°C
Storage Temperature *1 Pulse width limited by Tjmax.
VCES VGES
IC IC ICP*1 PD PD Tj Tstg
650 30 70 40 160 234 117 40 to +175 55 to +175
Unit V V A A A W W °C °C
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1/9
2015.10 - Rev.C
RGTH80TS65 Thermal Resistance
Parameter Thermal Resistance IGBT Junction - Case
Data Sheet
Symbol Rθ(j-c)
Values Min. Typ. Max.
Unit
- - 0.64 °C/W
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values Min. Typ.
Max.
Collector - Emitter Breakdown Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit V
Collector Cut - off Current...
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