Signal MOSFET. RHK003N06FRA Datasheet

RHK003N06FRA MOSFET. Datasheet pdf. Equivalent

Part RHK003N06FRA
Description Nch 60V 300mA Small Signal MOSFET
Feature .
Manufacture Rohm
Datasheet
Download RHK003N06FRA Datasheet

RHK003N06FRA Datasheet
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RHK003N06FRA
RHK003N06FRA
  Nch 60V 300mA Small Signal MOSFET
VDSS
RDS(on)(Max.)
ID
PD
60V
1.0Ω
±300mA
200mW
lFeatures
1) Very fast switching
2) Pb-free lead plating ; RoHS compliant.
3) AEC-Q101 Qualified
lOutline
SOT-346
SC-59
SMT3
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching circuits
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
T146
Marking
RKS
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
60 V
Continuous drain current
ID
±300
mA
Pulsed drain current
IDP*1 ±1.2 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*2 200 mW
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
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© 2016 ROHM Co., Ltd. All rights reserved.
1/10
20160915 - Rev.001    



RHK003N06FRA
RHK003N06FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
Values
Min. Typ. Max.
- - 625
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 60V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*3 VGS = 10V, ID = 300mA
VGS = 4V, ID = 300mA
Forward Transfer
Admittance
|Yfs|*3 VDS = 10V, ID = 300mA
Values
Unit
Min. Typ. Max.
60 - - V
- 66.1 - mV/
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -3.0 - mV/
- 0.7 1.0
Ω
- 1.1 1.5
200 -
- mS
*1 Pw10μs , Duty cycle1%
*2 Each terminal mounted on a reference land.
*3 Pulsed
                                             
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/10
                                          
20160915 - Rev.001





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