MOS FET. RHU002N06FRA Datasheet

RHU002N06FRA FET. Datasheet pdf. Equivalent

Part RHU002N06FRA
Description 4V Drive Nch MOS FET
Feature 4V Drive Nch MOSFET RHU002N06FRA Structure Silicon N-channel MOSFET transistor Features 1) Low on-.
Manufacture Rohm
Datasheet
Download RHU002N06FRA Datasheet

4V Drive Nch MOSFET RHU002N06FRA Structure Silicon N-channe RHU002N06FRA Datasheet
Recommendation Recommendation Datasheet RHU002N06FRA Datasheet





RHU002N06FRA
4V Drive Nch MOSFET
RHU002N06FRA
Structure
Silicon N-channel
MOSFET transistor
Features
1) Low on-resistance.
2) High ESD.
3) High-speed switching.
4) Low-voltage drive (4V).
5) Drive circuits can be simple.
6) Parallel use is easy.
AEC-Q101 Qualified
Dimensions (Unit : mm)
UMT3
SOT-323
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2) (1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : KP
Applications
Switching
Packaging specifications
Package
Code
Type
Basic ordering unit (pieces)
RRHHUU000022NN0066FRA
Taping
T106
3000
Equivalent circuit
(3)
(2) 2
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP 1
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
IS
ISP 1
PD 2
Channel temperature
Tch
Storage temperature
Tstg
1 Pw10μs, Duty cycle1%
2 Each terminal mounted on a recommended
Limits
60
±20
±200
±800
200
800
200
150
55 to +150
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
Thermal resistance
Parameter
Symbol
Channel to ambient
Rth (ch-a)
With each pin mounted on the recommended land.
Limits
625
Unit
°C / W
1
1 ESD PROTECTION DIODE (1)
2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.05 - Rev.C



RHU002N06FRA
RHU002N06FRA
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Gate leakage current
IGSS
Drain-source breakdown voltage V (BR) DSS 60
Drain cutoff current
IDSS
Gate threshold voltage
VGS (th)
1
Drain-source on-state resistance RDS (on)
Forward transfer admittance
l Yfs l0.1
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Pulsed
Typ.
1.7
2.8
15
8
4
6
5
12
95
2.2
0.6
0.3
Max.
±10
1
2.5
2.4
4.0
4.4
Unit Test Conditions
μA VGS=±20V, VDS=0V
V ID=1mA, VGS=0V
μA VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=200mA, VGS=10V
Ω
ID=200mA, VGS=4V
S VDS=10V, ID=200mA
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=100mA, VDD 30V
ns VGS=10V
ns RL=300Ω
ns RG=10Ω
nC VDD 30V
nC VGS=10V
nC ID=200mA
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
1.2 V
Pulsed
Conditions
IS=200mA, VGS=0V
Data Sheet
Electrical characteristic curves
0.8
10V
0.7
8V
0.6
6V
Ta=25°C
Pulsed
0.5
4V
0.4
0.3 3.5V
0.2
VGS=3V
0.1
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Output Characteristics
10
Ta=125°C
75°C
25°C
25°C
VGS=10V
Pulsed
1
VDS=10V
Pulsed
0.1
Ta=25˚C
25˚C
75˚C
125˚C
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical Transfer Characteristics
10
Ta=125°C
75°C
25°C
25°C
VGS=4V
Pulsed
1.0
0.01
0.1
DRAIN CURRENT : ID (A)
1.0
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( Ι )
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
1.0
0.01
0.1
DRAIN CURRENT : ID (A)
1.0
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current ( ΙΙ )
2/3
2.5
VDS=10V
ID=1mA
Pulsed
2.0
1.5
1.0
0.5
0.0
50 25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate Threshold Voltage
vs. Channel Temperature
7
Ta=25°C
Pulsed
6
5
4
ID=200mA
3
2
100mA
1
0 0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
2012.05 - Rev .C





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