RJU003N03FRA

2.5V Drive Nch MOSFET RJU003N03FRA AEC-Q101 Qualified zStructure Silicon N-channel MOSFET zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). zApplications Switching zPackaging specifications and hFE Package Type Code Basic ordering unit (pieces) RRJJUU000033NN0033FRA Taping T106 3000 zDimensions (Unit : mm) UMT3 2.0 0.3 (3) 0.9 0.2 0.7 1.25 2.1 0.1Min. (1) Source (2) Gate (3) Drain (2) (1) 0.65 0.65 1.3 0.15 Each lead has same dimensions Abbreviated symbol : LP zInner circuit (3) (2) ∗2 ∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits 30 ±12 ±300 ±1.2 200 150 −55 to +150 Unit V V mA A mW °C °C (1) Source (2) Gate (3) Drain zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 625 Unit °C/W www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.03 - Rev.A RJU003N03FRA zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 − − V ID= 1mA, VGS=0V Zero gate voltage drain current IDSS − − 1 µA VDS= 30V, ...