RSR010N10FHA

RSR010N10FHA Nch 100V 1A Power MOSFET VDSS RDS(on) (Max.) ID PD 100V 520mW 1.0A 1.0W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline TSMT3 (1) lInner circuit (1) Gate (2) Source (3) Drain (2) Datasheet AEC-Q101 Qualified (3) *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 3,000 TL ZJ Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value 100 1 4 20 1.0 0.54 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.06 - Rev.B RSR010N10FHA lThermal resistance Parameter Thermal resistance, junction - ambient Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 125 °C/W - - 231 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Values Min. Typ. Max. Unit 100 - - V Breakdown voltage temperature coefficient ΔV(BR)DSS ID = 1mA ΔTj referenced to 25°C - Zero gate voltage drain current Gate - Source l...