RSR010N10

Data Sheet 4V Drive Nch MOSFET RSR010N10  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).  Application Switching  Dimensions (Unit : mm) TSMT3 (3) (1) (2) Abbreviated symbol : ZJ  Packaging specifications Package Type Code Basic ordering unit (pieces) RSR010N10 Taping TL 3000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 100 20 1 4 0.8 4 1 150 55 to 150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Unit V V A A A A W C C  Inner circuit (3) (1) Gate (2) Source (3) Drain ∗1 ∗2 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 125 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.05 - Rev.A RSR010N10  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Ri...