Power MOSFET. RSR020P05FRA Datasheet

RSR020P05FRA MOSFET. Datasheet pdf. Equivalent

Part RSR020P05FRA
Description Pch -45V -2.0A Power MOSFET
Feature RSR020P05FRA Pch -45V -2.0A Power MOSFET VDSS RDS(on) (Max.) ID PD -45V 190mW -2.0A 1.0W lOutline.
Manufacture Rohm
Datasheet
Download RSR020P05FRA Datasheet

RSR020P05FRA Pch -45V -2.0A Power MOSFET VDSS RDS(on) (Max. RSR020P05FRA Datasheet
Recommendation Recommendation Datasheet RSR020P05FRA Datasheet





RSR020P05FRA
RSR020P05FRA
  Pch -45V -2A Small Signal MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
-45V
190mΩ
±2.0A
1.0W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
5) AEC-Q101 Qualified
lOutline
SOT-346T
SC-96
TSMT3
 
      
lInner circuit
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
ZH
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-45 V
Continuous drain current
ID*1 ±2.0 A
Pulsed drain current
IDP*2 ±8.0 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*3 1.0 W
PD*4 0.54 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
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© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160808 - Rev.001    



RSR020P05FRA
RSR020P05FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*3
RthJA*4
Values
Min. Typ. Max.
- - 125
- - 232
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = -1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = -45V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = -10V, ID = -1mA
 ΔVGS(th)   ID = -1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = -10V, ID = -2.0A
RDS(on)*5 VGS = -4.5V, ID = -2.0A
VGS = -4.0V, ID = -2.0A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*5 VDS = -10V, ID = -2.0A
Values
Unit
Min. Typ. Max.
-45 - - V
- -50 - mV/
- - -1 μA
- - ±10 μA
-1.0 - -3.0 V
- 3.3 - mV/
- 130 190
- 180 260 mΩ
- 200 280
- 21 - Ω
1.2 4.0 -
S
*1 Limited only by maximum temperature allowed
*2 Pw10μs , Duty cycle1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (12×20×0.8mm)
*5 Pulsed
                                             
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20160808 - Rev.001





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