Pch -45V -2.0A Power MOSFET
RSR020P05FRA
Pch -45V -2.0A Power MOSFET
VDSS RDS(on) (Max.)
ID PD
-45V 190mW -2.0A 1.0W
lOutline
TSMT3
Datasheet
AE...
Description
RSR020P05FRA
Pch -45V -2.0A Power MOSFET
VDSS RDS(on) (Max.)
ID PD
-45V 190mW -2.0A 1.0W
lOutline
TSMT3
Datasheet
AEC-Q101 Qualified
(1) (2)
(3)
lFeatures 1) Low on - resistance.
lInner circuit
2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant
(1) Gate (2) Source (3) Drain
*1 BODY DIODE *2 ESD PROTECTION DIODE
lApplication DC/DC converters
lAbsolute maximum ratings(Ta = 25°C) Parameter
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature
lPackaging specifications Packaging Reel size (mm) Tape width (mm)
Type Basic ordering unit (pcs) Taping code Marking
Taping 180 8 3,000 TL ZH
Symbol
VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg
Value -45 2.0 8.0 20 1.0 0.54 150 -55 to +150
Unit V A A V W W °C °C
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1/11
2012.08 - Rev.A
RSR020P05FRA lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3 RthJA *4
Values Min. Typ. Max.
Unit
- - 125 °C/W
- - 232 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = -1mA
Values Min. Typ. Max.
Unit
-45 - - V
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C
- -43 - mV/°C
Zero gate voltage drain current
IDSS VDS = -45V, VGS = 0V
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- -...
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