MOS FET. RTQ045N03FRA Datasheet

RTQ045N03FRA FET. Datasheet pdf. Equivalent

Part RTQ045N03FRA
Description 2.5V Drive Nch MOS FET
Feature Transistors 2.5V Drive Nch MOS FET RTQ045N0033FRA RTQR0T4Q50N4053NF0R3A AEC-Q101 Qualified zStruct.
Manufacture Rohm
Datasheet
Download RTQ045N03FRA Datasheet

Transistors 2.5V Drive Nch MOS FET RTQ045N0033FRA RTQR0T4Q5 RTQ045N03FRA Datasheet
Recommendation Recommendation Datasheet RTQ045N03FRA Datasheet





RTQ045N03FRA
Transistors
2.5V Drive Nch MOS FET
RTQ045N0033FRA
RTQR0T4Q50N4053NF0R3A
AEC-Q101 Qualified
zStructure
Silicon N-channel
MOS FET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6) .
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : QM
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRTTQQ00445NN0033FRA
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
30
12
±4.5
±18
1.0
4.0
1.25
150
55~+150
Unit
V
V
A
A
A
A
W
°C
°C
zEquivalent circuit
(6) (5) (4)
(6) (5) (4)
2
(1) (2) (3)
1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
100
Unit
°C / W
Rev.C
1/3



RTQ045N03FRA
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
30
0.5
4.5
Typ.
30
32
42
540
150
100
13
31
45
30
7.6
1.2
2.7
Max.
±10
1
1.5
43
45
60
10.7
Unit Conditions
µA VGS12V, VDS=0V
V ID=1mA, VGS=0V
µA VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=4.5A, VGS=4.5V
mID=4.5A, VGS=4V
ID=4.5A, VGS=2.5V
S ID=4.5A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=2.25A, VDD 15V
ns VGS=4.5V
ns RL=6.67
ns RG =10
nC VDD 15V
nC VGS=4.5V
nC ID=4.5A
RTQR0T4Q50N4053NF0R3A
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.2 V IS=4A, VGS=0V
Rev.C
2/3





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