Document
SCS208AGHR
SiC Schottky Barrier Diode
VR 650V IF 8A QC 13nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer schottky diode
lAEC-Q101 Qualified
TO-220AC
(1)
Data Sheet
lInner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 50 C
SCS208AG
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Total power disspation
VRM 650 V
VR 650 V
IF 8*1 A
31*2
A
IFSM 118*3 A
25*4
A
IFRM
35*5
A
PD
68*6
W
Junction temperature
Tj 175 °C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=139°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
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1/5
2014.05 - Rev.A
SCS208AGHR
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
DC blocking voltage
VDC IR =0.16mA
600 -
-
IF=8A,Tj=25°C
- 1.35 1.55
Forward voltage
VF IF=8A,Tj=150°C
- 1.55 -
IF=8A,Tj=175°C
- 1.63 -
VR=600V,Tj=25°C
- 1.6 160
Reverse current
IR VR=600V,Tj=150°C
- 24 -
VR=600V,Tj=175°C
- 56 -
Total capacitance
VR=1V,f=1MHz C
VR=600V,f=1MHz
- 291 - 30 -
Total capacitive charge
Qc VR=400V,di/dt=350A/ms - 13 -
Switching time
tc VR=400V,di/dt=350A/ms - 13 -
Unit
V V V V mA mA mA pF pF nC ns
lThermal characteristics Parameter
Thermal resistance
Symbol Rth(j-c)
Conditions -
Values Min. Typ. Max.
Unit
- 1.9 2.2 °C/W
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2/5
2014.05 - Rev.A
SCS208AGHR lElectrical characteristic curves
Data Sheet
Forward Current : IF [A]
Fig.1 VF - IF Characteristics
100 Pulsed
10
Ta=175ºC 1 Ta=125ºC
Ta=75ºC 0.1
Ta=25ºC Ta= -25ºC
0.01
0.001 0.0
0.5 1.0 1.5 2.0 2.5 Forward Voltage : VF [V]
Forward Current : IF [A]
Fig.2 VF - IF Characteristics
12 Pulsed Ta= -25ºC
10
8
6
4
Ta=25ºC Ta=75ºC Ta=125ºC
Ta=175ºC
2
0 0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage : VF [V]
Reverse Current : IR [mA]
Fig.3 VR - IR Characteristics
100 Ta=175ºC
Ta=125ºC 10 Ta=75ºC
Ta=25ºC 1
Ta= -25ºC
0.1
0.01
0.001 0
100 200 300 400 500 600
Reverse Voltage : VR [V]
Capacitance Between Terminals : Ct [pF]
Fig.4 VR-Ct Characteristics
1,000
100
10
Ta=25ºC f=1MHz
1 0.01
0.1
1
10 100 1000
Reverse Voltage : VR [V]
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3/5
2014.05 - Rev.A
SCS208AGHR lElectrical characteristic curves
Data Sheet
Thermal Resistance : Rth(j-c) [ºC/W]
Fig.5 Thermal Resistance vs. Pulse Width
10 Ta=25ºC Single Pulse
1
0.1
0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width : Pw [s]
Power Dissipation [W]
Fig.6 Power Dissipation
80 70 60 50 40 30 20 10
0 0 25 50 75 100 125 150 175
Case Temperature : Tc [ºC]
Peak Forward Current : IP [A]
Fig.7 Ip-Tc Derating Curve
45 Duty=0.1
40
35
30 Duty=0.2
25
20 Duty=0.5
15
10 Duty=0.8
5
D.C.
0 0 25 50 75 100 125 150 175
Case Temperature : Tc [ºC]
Power Dissipation [W]
Fig.8 Io-Pf Characteristics
40
Duty=0.8 Duty=0.5 Duty=0.2 30 Duty=0.1
D.C.
20
10
0 0 5 10 15
Average Rectified Forward Current : Io [A]
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4/5
2014.05 - Rev.A
SCS208AGHR lDimensions (Unit : mm)
TO-220AC
Data Sheet
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.05 - Rev.A
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