SCS210KGHR

SCS210KGHR SiC Schottky Barrier Diode VR 1200V IF 10A QC 34nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer schottky diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 C SCS210KG lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power disspation VRM 1200 V VR 1200 V IF 10*1 A 45*2 A IFSM 190*3 A 33*4 A IFRM 46*5 A PD 150*6 W Junction temperature Tj 175 °C Range of storage temperature Tstg -55 to +175 °C *1 Tc=146°C *2 PW=8.3ms sinusoidal,Tj=25°C *3 PW=10ms square,Tj=25°C *4 Pw=8.3ms sinusoidal, Tj=150°C, *5 Tc=100°C,Tj=150°C,Duty cycle=10% *6 Tc=25°C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/5 2014.05 - Rev.A SCS210KGHR Data Sheet lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =0.2mA 1200 - - IF=10A,Tj=25°C - 1.4 1.6 Forward voltage VF IF=10A,Tj=150°C - 1.8 - IF=10A,Tj=175°C - 1.9 - VR=1200V,Tj=25°C - 10 200 Reverse current IR VR=1200V,Tj=150°C - 80 - VR=1200V,Tj...