SISS27DN-T1-GE3

SMD Type SISS27DN-T1-GE3 MOSFET 30V P-Channel MOSFET General Description Product Summary The SISS27DN uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. RoHS and Halogen-Free Compliant VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -6V) -30V -50A < 6.2mΩ < 8.9mΩ 100% UIS Tested 100% Rg Tested PowerPAK 1212-8S Top View Bottom Pin 1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy L=0.1mH C IDSM IAR, IAS EAR, EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -50 -39 -210 -25 -20 -44 97 83 33 6.25 4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W SMD Type MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage ...