P-Channel MOSFET. SISS27DN-T1-GE3 Datasheet

SISS27DN-T1-GE3 MOSFET. Datasheet pdf. Equivalent

Part SISS27DN-T1-GE3
Description 30V P-Channel MOSFET
Feature SMD Type SISS27DN-T1-GE3 MOSFET 30V P-Channel MOSFET General Description Product Summary The S.
Manufacture Kexin
Datasheet
Download SISS27DN-T1-GE3 Datasheet

SMD Type SISS27DN-T1-GE3 MOSFET 30V P-Channel MOSFET Gen SISS27DN-T1-GE3 Datasheet
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SISS27DN-T1-GE3
SMD Type
SISS27DN-T1-GE3
MOSFET
30V P-Channel MOSFET
General Description
Product Summary
The SISS27DN uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection
applications.
• RoHS and Halogen-Free Compliant
VDS
ID (at VGS= -10V)
RDS(ON) (at VGS= -10V)
RDS(ON) (at VGS = -6V)
-30V
-50A
< 6.2m
< 8.9m
100% UIS Tested
100% Rg Tested
PowerPAK 1212-8S
Top View
Bottom
Pin 1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR, IAS
EAR, EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±25
-50
-39
-210
-25
-20
-44
97
83
33
6.25
4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16
45
1.1
Max
20
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W



SISS27DN-T1-GE3
SMD Type
MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-6V, ID=-20A
VGS=-4.5V, ID=-10A
Forward Transconductance
VDS=-5V, ID=-20A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=55°C
TJ=125°C
-30
-1.7
-210
-2.2
5.1
7.6
7.1
10.7
46
-0.7
-1
-5
±100
-2.8
6.2
9.2
8.9
-1
-50
V
µA
nA
V
A
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1960
380
220
7
2450
550
370
14
2940
720
520
28
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
33 42 51 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
16 21 26 nC
VGS=-10V, VDS=-15V, ID=-20A 5.5 7 8.5 nC
Qgd Gate Drain Charge
7 12 17 nC
tD(on)
Turn-On DelayTime
9.5 ns
tr Turn-On Rise Time
VGS=-10V, VDS=-15V,
10 ns
tD(off)
Turn-Off DelayTime
RL=0.75, RGEN=3
104 ns
tf Turn-Off Fall Time
78 ns
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs
20 25 30 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
37 47 57 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.





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