Barrier Diode. SCS212AGHR Datasheet

SCS212AGHR Diode. Datasheet pdf. Equivalent

Part SCS212AGHR
Description SiC Schottky Barrier Diode
Feature SCS212AGHR SiC Schottky Barrier Diode VR 650V IF 12A QC 18nC lFeatures 1) Shorter recovery time 2) R.
Manufacture Rohm
Datasheet
Download SCS212AGHR Datasheet

SCS212AGHR SiC Schottky Barrier Diode VR 650V IF 12A QC 18nC SCS212AGHR Datasheet
Recommendation Recommendation Datasheet SCS212AGHR Datasheet





SCS212AGHR
SCS212AGHR
SiC Schottky Barrier Diode
VR 650V
IF 12A
QC 18nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer Schottky diode
lAEC-Q101 Qualified
TO-220AC
(1)
Data Sheet
lInner circuit
(2) (3)
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2) (3)
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
50
C
SCS212AG
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VRM 650 V
VR 650 V
IF
12*1
A
45*2
A
IFSM 170*3 A
36*4
A
IFRM
49*5
A
PD
93*6
W
Junction temperature
Tj 175 °C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=134°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.05 - Rev.A



SCS212AGHR
SCS212AGHR
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
DC blocking voltage
VDC IR =0.24mA
600 -
-
IF=12A,Tj=25°C
- 1.35 1.55
Forward voltage
VF IF=12A,Tj=150°C
- 1.55 -
IF=12A,Tj=175°C
- 1.63 -
VR=600V,Tj=25°C
- 2.4 240
Reverse current
IR VR=600V,Tj=150°C
- 36 -
VR=600V,Tj=175°C
- 84 -
Total capacitance
VR=1V,f=1MHz
C
VR=600V,f=1MHz
- 438 -
- 44 -
Total capacitive charge
Qc VR=400V,di/dt=350A/ms - 18 -
Switching time
tc VR=400V,di/dt=350A/ms - 16 -
Unit
V
V
V
V
mA
mA
mA
pF
pF
nC
ns
lThermal characteristics
Parameter
Thermal resistance
Symbol
Rth(j-c)
Conditions
-
Values
Min. Typ. Max.
Unit
- 1.3 1.6 °C/W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.05 - Rev.A





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)