SCS212AGHR
SiC Schottky Barrier Diode
VR 650V IF 12A QC 18nC
lFeatures 1) Shorter recovery time 2) Reduced temperature d...
SCS212AGHR
SiC
Schottky Barrier Diode
VR 650V IF 12A QC 18nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer
Schottky diode
lAEC-Q101 Qualified
TO-220AC
(1)
Data Sheet
lInner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 50 C
SCS212AG
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Total power disspation
VRM 650 V
VR 650 V
IF
12*1
A
45*2
A
IFSM 170*3 A
36*4
A
IFRM
49*5
A
PD
93*6
W
Junction temperature
Tj 175 °C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=134°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
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1/5
2014.05 - Rev.A
SCS212AGHR
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
DC blocking voltage
VDC IR =0.24mA
600 -
-
IF=12A,Tj=25°C
- 1.35 1.55
Forward voltage
VF IF=12A,Tj=150°C
- 1.55 -
IF=12A,Tj=175°C
- 1.63 -
VR=600V,Tj=25°C
- 2.4 240
Reverse current
IR VR=600V,Tj=150°C
- 36 -
VR=600V,Tj=175°...
