8 PROM. UT28F256LV Datasheet

UT28F256LV PROM. Datasheet pdf. Equivalent

Part UT28F256LV
Description Radiation-Hardened 32K x 8 PROM
Feature Standard Products UT28F256LV Radiation-Hardened 32K x 8 PROM Data Sheet December, 2002 FEATURES q P.
Manufacture Aeroflex Circuit Technology
Datasheet
Download UT28F256LV Datasheet

Standard Products UT28F256LV Radiation-Hardened 32K x 8 PROM UT28F256LV Datasheet
Recommendation Recommendation Datasheet UT28F256LV Datasheet





UT28F256LV
Standard Products
UT28F256LV Radiation-Hardened 32K x 8 PROM
Data Sheet
December, 2002
FEATURES
q Programmable, read-only, asynchronous, radiation-
hardened, 32K x 8 memory
- Supported by industry standard programmer
q 65ns maximum address access time (-55 oC to
+125 oC)
q Three-state data bus
q Low operating and standby current
- Operating: 50.0mA maximum @15.4MHz
Derating: 1.5mA/MHz
- Standby: 1.0mA maximum (post-rad)
q Radiation-hardened process and design; total dose
irradiation testing to MIL-STD-883, Method 1019
- Total dose: 1E6 rad(Si)
- LETTH(0.25) ~ 100 MeV-cm2/mg
- SEL Immune >128 MeV-cm2/mg
- Saturated Cross Section cm2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous
heavy ion
- Memory cell LET threshold: >128 MeV-cm2/mg
q QML Q & V compliant part
- AC and DC testing at factory
q Packaging options:
- 28-lead 50-mil center flatpack (0.490 x 0.74)
- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
q VDD: 3.0Vto 3.6V
q Standard Microcircuit Drawing 5962-01517
PRODUCT DESCRIPTION
The UT28F256LV amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened, 32K x 8
programmable memory device. The UT28F256LV PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the
UT28F256LV. The combination of radiation-hardness, fast
access time, and low power consumption make the UT28F256LV
ideal for high speed systems designed for operation in radiation
environments.
A(14:0)
DECODER
MEMORY
ARRAY
CE
CONTROL
PE LOGIC
OE
SENSE AMPLIFIER
PROGRAMMING
Figure 1. PROM Block Diagram
DQ(7:0)
1



UT28F256LV
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)