Fast IGBT. IRGBC40K-S Datasheet

IRGBC40K-S IGBT. Datasheet pdf. Equivalent

Part IRGBC40K-S
Description UltraFast Fast IGBT
Feature PD - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT .
Manufacture International Rectifier
Datasheet
Download IRGBC40K-S Datasheet

PD - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR IRGBC40K-S Datasheet
Recommendation Recommendation Datasheet IRGBC40K-S Datasheet





IRGBC40K-S
PD - 9.1134
IRGBC40K-S
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast Fast IGBT
Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over
5kHz) See Fig. 1 for Current vs. Frequency
curve
C
G
E
n-channel
VCES = 600V
VCE(sat) 3.2V
@VGE = 15V, IC = 25A
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor
control and other applications requiring short circuit withstand capability.
SMD-220
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
42
25
84
84
10
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
RθJC
RθJA
RθJA
Wt
Parameter
Junction-to-Case
Junction-to-Ambient, (PCB mount)**
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
------
Typ.
------
------
------
2 (0.07)
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
0.77
40
80
------
Units
°C/W
g (oz)



IRGBC40K-S
IRGBC40K-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage „ 20 ---- ---- V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage---- 0.46 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ---- 2.1 3.2
IC = 25A
VGE = 15V
---- 2.8 ---- V IC = 42A
See Fig. 2, 5
---- 2.5 ----
IC = 25A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ---- 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance … 7.0 14 ---- S VCE = 100V, IC = 25A
ICES
Zero Gate Voltage Collector Current
---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
---- 61 92
---- 13 19
IC = 25A
nC VCC = 400V
See Fig. 8
---- 22 33
VGE = 15V
---- 35 ----
---- 27 ----
---- 160 240
---- 130 200
TJ = 25°C
ns IC = 25A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
---- 0.52 ----
---- 1.2 ---- mJ See Fig. 9, 10, 11, 14
---- 1.7 2.6
10 ---- ----
µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
---- 34 ----
TJ = 150°C,
---- 28 ----
---- 300 ----
---- 310 ----
ns IC = 25A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
---- 3.6 ---- mJ See Fig. 10, 14
---- 7.5 ---- nH Measured 5mm from package
---- 1500 ----
---- 190 ----
---- 17 ----
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
 Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
‚ VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10, ( See fig. 13a )
ƒ Repetitive rating; pulse width limited
by maximum junction temperature.
… Pulse width 5.0µs,
single shot.
„ Pulse width 80µs; duty factor 0.1%.





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