PD - 9.1134
IRGBC40K-S
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast Fast IGBT
Features
• Short ci...
PD - 9.1134
IRGBC40K-S
INSULATED GATE BIPOLAR
TRANSISTOR
Short Circuit Rated UltraFast Fast IGBT
Features
Short circuit rated - 10µs @ 125°C, VGE = 15V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
G E
n-channel
VCES = 600V VCE(sat) ≤ 3.2V
@VGE = 15V, IC = 25A
Description
Insulated Gate Bipolar
Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar
transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
SMD-220
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max. 600 42 25 84 84 10 ±20 15 160 65 -55 to +150
300 (0.063 in. (1.6mm) from case) 10 lbf...