2SK2926
2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.04...
Description
2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.042Ω typ.
4V gate drive devices. High speed switching
Outline
DPAK–2
D
G
S
44
12 3
12 3
1. Gate 2. Drain 3. Source 4. Drain
ADE-208-535 1st. Edition
2SK2926(L), 2SK2926(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω
Symbol VDSS VGSS ID I *1
D(pulse)
I DR I AP * 3 EAR* 3 Pch*2 Tch Tstg
Ratings 60 ±20 15 60 15 15 19 25 150 –55 to +150
Unit V V A A A A mJ W °C °C
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown voltage
V(BR)DSS
Gate to source breakdown voltage
V(BR)GSS
Zero gate voltege drain current
I DSS
Gate to source leak current IGSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage
t d(on) tr t d(off) tf VDF
Body to drain diode reverse trr recovery time
Note: 1. Pulse test
Min 60
±20
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— 1.5 — — 7 — — — — — — — —
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2SK2926(L), 2SK29...
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