2SK2926. K2926 Datasheet

K2926 2SK2926. Datasheet pdf. Equivalent

Part K2926
Description 2SK2926
Feature 2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resis.
Manufacture Hitachi Semiconductor
Datasheet
Download K2926 Datasheet

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed K2926 Datasheet
Recommendation Recommendation Datasheet K2926 Datasheet





K2926
2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.042typ.
4V gate drive devices.
High speed switching
Outline
DPAK–2
D
G
S
44
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-535
1st. Edition



K2926
2SK2926(L), 2SK2926(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Ta = 25°C
3. Value at Ta = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
I AP * 3
EAR* 3
Pch*2
Tch
Tstg
Ratings
60
±20
15
60
15
15
19
25
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2





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