Recovery Diode. VS-HFA15TB60-N3 Datasheet

VS-HFA15TB60-N3 Diode. Datasheet pdf. Equivalent

Part VS-HFA15TB60-N3
Description Ultrafast Soft Recovery Diode
Feature www.vishay.com VS-HFA15TB60PbF, VS-HFA15TB60-N3 Vishay Semiconductors HEXFRED®, Ultrafast Soft Rec.
Manufacture Vishay
Datasheet
Download VS-HFA15TB60-N3 Datasheet

www.vishay.com VS-HFA15TB60PbF, VS-HFA15TB60-N3 Vishay Semi VS-HFA15TB60-N3 Datasheet
Recommendation Recommendation Datasheet VS-HFA15TB60-N3 Datasheet





VS-HFA15TB60-N3
www.vishay.com
VS-HFA15TB60PbF, VS-HFA15TB60-N3
Vishay Semiconductors
HEXFRED®,
Ultrafast Soft Recovery Diode, 15 A
TO-220AC
Base
cathode
2
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-220AC
15 A
600 V
1.2 V
23 ns
150 °C
Single die
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified
JEDEC®-JESD47
according
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
Available
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA15TB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A continuous current, the
VS-HFA15TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
600
15
150
60
74
29
-55 to +150
UNITS
V
A
W
°C
Revision: 10-Jul-15
1 Document Number: 94053
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



VS-HFA15TB60-N3
www.vishay.com
VS-HFA15TB60PbF, VS-HFA15TB60-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
VBR IR = 100 μA
IF = 15 A
Maximum forward voltage
VFM IF = 30 A
See fig. 1
IF = 15 A, TJ = 125 °C
Maximum reverse
leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
Junction capacitance
CT VR = 200 V
See fig. 3
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
8.0
MAX.
-
1.7
2.0
1.6
10
1000
50
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5
trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
trr1 TJ = 25 °C
trr2 TJ = 125 °C
- 19
- 42
- 74
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 200 V
- 4.0
- 6.5
- 84
- 241
Peak rate of fall of recovery
current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
- 188
- 160
MAX.
-
60
120
6.0
10
180
600
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Tlead
RthJC
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.7
- 80
2.0 -
0.07 -
12
-
(10)
HFA15TB60
UNITS
°C
K/W
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-15
2 Document Number: 94053
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)