SCHOTTKY Diodes. GFMK3045 Datasheet

GFMK3045 Diodes. Datasheet pdf. Equivalent

Part GFMK3045
Description Trench SCHOTTKY Diodes
Feature GFMK3045 Trench SCHOTTKY Diodes ■ Features ● , Low VF,low IR ● , Low Power loss, High efficienc.
Manufacture Yangzhou Yangjie
Datasheet
Download GFMK3045 Datasheet

GFMK3045 Trench SCHOTTKY Diodes ■ Features ● Low VFlow GFMK3045 Datasheet
Recommendation Recommendation Datasheet GFMK3045 Datasheet





GFMK3045
GFMK3045
沟槽肖特基二极管 Trench SCHOTTKY Diodes
■特征 Features
低正向,低漏电
Low VFlow IR
低功耗,大电流
Low Power loss, High efficiency
高静电能力(ESD>=30KV
参考标准:IEC-61000-4-2,接触式
High ESDESD>=30KV
Reference standard: IEC - 61000-4-2, contact
IFAV30A
VRRM
45V
■用途 Applications
太阳能行业
The solar industry
■外形尺寸和印记 Outline Dimensions and Mark
G F 0 0 9-2
A
公差:
A-A
■极限值(绝对最大额定值)
Limiting ValuesAbsolute Maximum Rating
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward Current
符号
Symbol
VRRM
Io
IFSM
正向浪涌电流的平方对电流浪涌持
续时间的积分值
Current Squared Time
I2t
单位
Unit
V
A
A
A2s
条件
Conditions
IR=0.2mA;Ta=25
60HZ 正弦波,电阻负载,Ta=25
60HZ sine wave, R- load, Ta=25
60HZ正弦波,一个周期,Ta=25
60HZ sine wave, 1 cycle, Ta=25
1mst8.3ms Tj=25
储存温度
Storage Temperature
Tstg
结温
Junction Temperature
在正向直流条件下,没有施加反向压降,通电
Tj
≤1h(图示1)
IN DC Forward Mode-Forward Operations
without reverse bias, t 1 h (Fig. 1)
■电特性 (Ta=25℃ 除非另有规定)
Electrical CharacteristicsTa=25Unless otherwise specified
GFMK3045
45
30
275
315
-55 ~ +150
-55~+200
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向峰值電流
Peak Reverse Current
热阻(典型)
Thermal Resistance(Typical)
符号
Symbol
VFM
IRRM1
IRRM2
RθJ-c
单位
Unit
V
mA
/W
测试条件
Test Condition
I FM =30.0A(Every Chip)
VRM =VRRM
Ta=25
Ta=100℃/125℃
结和壳之间
Between junction and case
最大值
Max
0.60
0.1
7/20
2.0
■ 备注 NOTE
Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test.
Document Number 0344
Rev. 1.0, 25-OCT-12
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com



GFMK3045
GFMK3045
■特性曲线(典型) Characteristics(Typical)
30.0
27.0
24.0
21.0
18.0
15.0
12.0
9.0
6.0
3.0
0
0
1:正向电流降额曲线
FIG1: IFAV--Tc Derating
TC measure point
IN DC
50 100 150
200
Tc()
图2:耐正向浪涌电流曲线
FIG2:Surge Forward Current Capadility
360
300
240
8.3ms Single
180 Half Since-Wave
JEDEC Method
120
60
0
12
5 10 20 50
Number of Cycles at 60Hz
100
图3:正向电压曲线
FIG3:Instantaneous Forward Voltage
100
10
Ta=25
1.0
0.1
0
0.2 0.4 0.6 0.8 1.0
VF(V)
图4:反向电流曲线
FIG4:Instantaneous Reverse Characteristics
100
Tj=125
10
Tj=100
1.0
0.1
Tj=25
0.01
0 20 40 60 80 100
VRM(%)
Document Number 0344
Rev. 1.0, 25-OCT-12
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com





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