DMP1081UCB4

DMP1081UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) BVDSS -12V RDS(ON) 0.065Ω Qg 2.5nC Qgd 0.6nC ID -3.3A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 0.065Ω to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching  Vgs(TH) = -0.5V Typ. for a Low Turn-On Potential  CSP with Footprint 1.0mm × 1.0mm  Height = 0.62mm for Low Profile  ESD = 3kV HBM Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Applications  Battery Management  Load Switch  Battery Protection Mechanical Data  Case: U-WLB1010-4  Terminal Connections: See Diagram Below  Weight: 0.0018 grams (Approximate) U-WLB1010-4 DD ESD PROTECTED TO 3kV GS Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMP1081UCB4-7 Case U-WLB1010-4 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free ...