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DMPH6050SK3Q Dataheets PDF



Part Number DMPH6050SK3Q
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMPH6050SK3Q DatasheetDMPH6050SK3Q Datasheet (PDF)

ADVANCED INFORMATION Product Summary BVDSS -60V RDS(ON) max 50mΩ @ VGS = -10V 70mΩ @ VGS = -4.5V ID max TC = +25°C -23.6A -20A Green DMPH6050SK3Q 60V +175°C P-CHANNEL ENHANCEMENT MOQDE MOSFET Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low Qg – Minimizes Switching Loss  Low RDS(ON) – Minimizes On State Loss  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen.

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ADVANCED INFORMATION Product Summary BVDSS -60V RDS(ON) max 50mΩ @ VGS = -10V 70mΩ @ VGS = -4.5V ID max TC = +25°C -23.6A -20A Green DMPH6050SK3Q 60V +175°C P-CHANNEL ENHANCEMENT MOQDE MOSFET Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low Qg – Minimizes Switching Loss  Low RDS(ON) – Minimizes On State Loss  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Engine Management Systems  Body Control Electronics  DC-DC Converters TO252 (DPAK) Mechanical Data  Case: TO252 (DPAK)  Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.315 grams (Approximate) D G Top View Pin Out Top View S Equivalent Circuit Ordering Information (Note 5) Notes: Part Number DMPH6050SK3Q-13 Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TO252 (DPAK) H6050S YYWW = Manufacturer’s Marking H6050S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) DMPH6050SK3Q Document number: DS37293 Rev. 5 - 2 1 of 7 www.diodes.com June 2016 © Diodes Incorporated ADVANCED INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V Steady State Steady State Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH TC = +25°C TC = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IDM IS IAS EAS DMPH6050SK3Q Q Value -60 ±20 -23.6 -19 -7.2 -6.0 -40 -3.8 -25 31 Units V V A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Steady State Steady State Symbol PD RJA PD RJA RJC TJ, TSTG Value 1.9 80 3.8 39 3 -55 to +175 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) BVDSS -60 IDSS — IGSS — — — — -1 — ±100 Gate Threshold Voltage Static Drain-Source On-Resistance VGS(TH) -1 — -3 — — 50 RDS(ON) — — 70 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) VSD — -0.7 -1.2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR — 1,377 — — 87 — — 68 — — 12 — — 12 — — 25 — — 3.8 — — 4.9 — — 5.3 — — 8.6 — — 49.4 — — 29.7 — — 14.2 — Body Diode Reverse Recovery Charge QRR — 7.9 — Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. .


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