Document
ADVANCED INFORMATION
Product Summary
BVDSS -60V
RDS(ON) max
50mΩ @ VGS = -10V 70mΩ @ VGS = -4.5V
ID max TC = +25°C
-23.6A -20A
Green
DMPH6050SK3Q
60V +175°C P-CHANNEL ENHANCEMENT MOQDE MOSFET
Features
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low Qg – Minimizes Switching Loss Low RDS(ON) – Minimizes On State Loss Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Engine Management Systems Body Control Electronics DC-DC Converters
TO252 (DPAK)
Mechanical Data
Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound;
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.315 grams (Approximate)
D
G
Top View
Pin Out Top View
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number DMPH6050SK3Q-13
Case TO252 (DPAK)
Packaging 2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO252 (DPAK)
H6050S YYWW
= Manufacturer’s Marking H6050S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53)
DMPH6050SK3Q
Document number: DS37293 Rev. 5 - 2
1 of 7 www.diodes.com
June 2016
© Diodes Incorporated
ADVANCED INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = -10V
Steady State
Steady State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
TC = +25°C TC = +70°C TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
IDM IS IAS EAS
DMPH6050SK3Q Q
Value -60 ±20 -23.6 -19
-7.2 -6.0 -40 -3.8 -25 31
Units V V
A
A
A A A mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range
Steady State Steady State
Symbol PD RJA PD RJA RJC
TJ, TSTG
Value 1.9 80 3.8 39 3
-55 to +175
Units W
°C/W W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9)
BVDSS
-60
IDSS
—
IGSS
—
—
—
—
-1
—
±100
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(TH)
-1
—
-3
—
—
50
RDS(ON)
—
—
70
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10)
VSD
—
-0.7 -1.2
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF tRR
— 1,377 —
—
87
—
—
68
—
—
12
—
—
12
—
—
25
—
—
3.8
—
—
4.9
—
—
5.3
—
—
8.6
—
—
49.4
—
—
29.7
—
— 14.2
—
Body Diode Reverse Recovery Charge
QRR
—
7.9
—
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. .