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DMT3006LDK

Diodes

N-Channel MOSFET

ADAVDAAVDNAVCNAECNDECIDENI IFNNNOFEFROWORMRPAMRMTAIOATOIDTINOUONCNT DMT3006LDK N-CHANNEL ENHANCEMENT MODE MOSFET Produ...


Diodes

DMT3006LDK

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ADAVDAAVDNAVCNAECNDECIDENI IFNNNOFEFROWORMRPAMRMTAIOATOIDTINOUONCNT DMT3006LDK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 30V RDS(ON) Max 6.5mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V ID Max TC = +25°C 46.2A 37.0A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters V-DFN3030-8 (Type Q) Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: V-DFN3030-8 (Type Q)  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish - NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.0172 grams (Approximate) D 8 76 5 Top View Bottom View D GSS S 1 23 4 Bottom View Pin Configuration G S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMT3006LDK-7 V-DFN3030-8 (Type Q) 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for m...




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