FZT853

SMD Type Transistors NPN Transistors FZT853 (KZT853) ■ Features ● Collector Current Capability IC=6A ● Collector Emitter Voltage VCEO=100V ● Complementary to FZT953 SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 123 10 Unit:mm 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating 200 100 6 6 10 3 150 -55 to 150 Unit V A W ℃ www.kexin.com.cn 1 SMD Type Transistors NPN Transistors FZT853 (KZT853) ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector-emitter breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Collector- emitter cut-off current RB ≤1kΩ Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base-Emitter Turn On Voltage DC current gain (Note.1) Switching Times Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCER IC=1mA, RB ≤1kΩ VCEO Ic= 10 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 200 V , IE= 0 VCB= 200 V , IE= 0 , Ta = 100℃ VCB= 200 V , IE= 0 ICER VCB= 200 V , IE= 0 , Ta = 100℃ IEBO VEB=...