SMD Type
NPN Tra nsistors H8050
Transistors
■ Features
● Collector Power Dissipation: PC=0.5W ● Collector Current: IC...
SMD Type
NPN Tra nsistors H8050
Transistors
■ Features
● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=1.5A
● Comlementary to H8550
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Rating 40 25 5 1.5 0.5 150
-55 to +150
Unit V V V A W ℃ ℃
■ Electrical Characteristics Ta = 25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter positive favor voltage output capacitance Transition frequency
■ Classification of hfe(1)
Type Range Marking
H8050-B 85-160 8050B
H8050-C 120-200 8050C
Symbol
Test conditions
VCBO IC= 100μA, IE=0
VCEO IC= 0.1mA, IB=0
VEBO IE= 100μA, IC=0
ICBO VCB= 40 V,IE=0
ICEO VCE= 20V, IB=0
IEBO VEB= 5V, IC=0
VCE= 1V, IC= 100mA hFE
VCE= 1V, IC= 800mA
VCE(sat) IC=800mA, IB= 80mA
VBE(sat) IC=800mA, IB=80mA
VBE(on) Ic=1V,VCE=10mA
VBEF IB=1A
Cob VCB=10V,IE=0,f=1MHz
fT VCE= 10V, IC=50mA
H8050-D 160-300 8050D
H8050-D3 300-400 8050D3
1.Base 2.Collector 3.Emitter
Min Typ Max Unit 40 V 25 V 5V
0.1 μA 0.1 μA 0.1 μA 85 400 40 0.5 V 1.2 V 1V 1.55 V 15 pF 100 MHz
www...