KTD1304

NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free KTD1304 1 2 3 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 25 20 12 0.3 0.2 150 -55 - 150 Unit V V V A W ˚C ˚C WEITRON http://www.weitron.com.tw 1/4 05-Feb-09 KTD1304 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=0.1mA,I E =0 Collector-Emitter Breakdown Voltage IC=1mA,I B=0 Emitter-Base Breakdown Voltage IC=0,IE=0.1mA IE=0,VCB=25V IC=0,VEB=12V ON CHARACTERISTICS DC Current Gain IC=4mA,VCE=2V IC=4mA,VCE=2V Collector-Emitter Saturation Voltage IC=0.1A, IB =10mA Base-Emitter Saturation Voltage IC=0.1A, IB =10mA DYNAMIC CHARACTERISTICS Transition Frequency IC=1mA,VCE=10V,f=100MHz Collector Output Capacitance IE=0,VCB=10V,f=1MHz On Resistance IB=1mA,Vin =0.3V,f=1KHz Symbol BVCBO Min 25 BVCEO BVEBO ICBO IEBO 20 12 - Typ - Max 0.1 0.1 Unit V V V µA µA hFE(FOR) hFE(REV) VCE(sat) 200 20 - VBE(sat) - - 800 -- - 0.25 V - 1V fT Cob R(on) - 60 - MHz 10 - pF 0.6 - Ω WEITRON http://www.weitron.com.tw 2/4 05-Feb-09 KTD1304 Typical characteristics WEITRON http://www.weitron.com.tw 3/4 05-Feb-09 KTD1304 SOT-23 Outline Dimension A TOP VIEW BC D EG H K L J M SOT-23 Dim Min A 0.35 B 1.19 C 2.10 D 0.85 E 0.46 G 1.70 H 2.70 J 0.01 K 0.89 L 0.30 M 0.076 Max 0.51 1.40 3.00...