MMBT2222A

MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter MECHANICAL DATA ● Case: SOT-23 ● Molding compound: UL flammability classification rating 94V-0 ● Moisture sensitivity level: level 1, per J-STD-020 ● Packing code with suffix "G" means green compound (halogen-free) ● Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: Indicated by cathode band ● Weight: 8 mg (approximately) KEY PARAMETERS PARAMETER VALUE UNIT VCBO VCEO VEBO IC hFE Package 75 V 40 V 6 V 600 mA 300 SOT-23 Configuration Single Dice ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL MMBT2222A Marking code on the device 1P Collector-base voltage, emitter open VCBO 75 Collector-emitter voltage, base open VCEO 40 Emitter-base voltage, collector open VEBO 6 Collector current, dc IC 600 Total dc power input to all terminals PT 300 Junction temperature TJ -55 to +150 Storage temperature TSTG -55 to +150 UNIT V V V mA mW °C °C 1 Version:F1703 MMBT2222A Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITION...