MMBT2222

MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value MMBT2222 MMBT2222A 60 75 30 40 56 600 200 150 -55 to +150 Unit V V V mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006 MMBT2222 / MMBT2222A Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA MMBT2222 MMBT2222A Collector Base Voltage at IC = 10 µA Collector Emitter Voltage at IC = 10 mA Emitter Base Voltage at IE = 10 µA Collector Base Cutoff Current at VCB = 50 V at VCB = 60 V Emitter Base Cutoff Current at VEB = 3 V Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A MMBT2222 MMBT2222A Transition Frequency at VCE = 20 V, -IE = 20 mA, f...