MMBT2222AT

Elektronische Bauelemente MMBT2222AT NPN Silicon General Purpose Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching SOT-523 MARKING CODE 1P PACKAGE INFORMATION Package MPQ SOT-523 3K Leader Size 7 inch REF. A B C D G J Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 ----- 011.005oo0 1.50 1.70 Collector 3 1 Base 2 Emitter MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector - Emitter Voltage VCEO 40 Collector - Base Voltage VCBO 75 Emitter - Base Voltage VEBO 6 Collector Current - Continuous Total Device Dissipation FR-4 Board @ TA=25°C 1 IC PD 600 150 Thermal Resistance, Junction to Ambient RθJA 833 Junction & Storage Temperature TJ, TSTG -55~150 Note: 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. Unit V V V mA mW °C / W °C http://www.SeCoSGmbH.com/ 17-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 5 Elektronische Bauelemente MMBT2222AT NPN Silicon General Purpose Transistors ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Characteristic Symbol Min. Max. Unit Test Conditions Collector-Emitter Breakdown Voltage 1 Off Characteristics V(BR)C...