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MMBT2907A

Taiwan Semiconductor

PNP Transistor

Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity ...


Taiwan Semiconductor

MMBT2907A

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Description
Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Mechanical Data ◇ Case : SOT- 23 small outline plastic package ◇ Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed ◇ High temperature soldering guaranteed : 260°C/10s ◇ Weight : 0.008 grams (approximately) ◇ Marking Code : 2F Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Parameter Symbol Power Dissipation PD Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Junction and Storage Temperature Range TJ , TSTG Notes:1. Valid provided that electrodes are kept at ambient temperature MMBT2907A 350mW, PNP Small Signal Transistor SOT-23 Value 350 -60 -60 -5 -600 -55 to + 150 Units mW V V V mA °C Version : B14 Small Signal Product Electrical Characteristics ( TA= 25oC unless otherwise noted ) Parameter Collector-Base Breakdown Voltage IC= -10μA Collector-Emitter Breakdown Voltage IC= -10mA Emitter-Base Breakdown Voltage IE= -10μA Collector Cut-off Current VCB= -50V Collector Cut-off Current VCE= -30V Base Cut-off Current VCE= -30V VCE= -10V VCE= -10V DC Current Gain VC...




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