BARRIER RECTIFIERS. SS33 Datasheet

SS33 RECTIFIERS. Datasheet pdf. Equivalent

Part SS33
Description SCHOTTKY BARRIER RECTIFIERS
Feature SS32-SS315 SCHOTTKY BARRIER RECTIFIERS PRODUCT SUMMARY 3.0 AMPS Surface Mount FEATURES For surface .
Manufacture Silicon Standard
Datasheet
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SS33
SS32-SS315
SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
3.0 AMPS Surface Mount
FEATURES
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
o
260 C / 10 seconds at terminals
SMC/DO-214AB
.126(3.20)
.114(2.90)
.245(6.22)
.220(5.59)
.103(2.62)
.079(2.00)
.063(1.6)
.039(1.0)
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.320(8.13)
.305(7.75)
MECANICAL DATA
Case: JEDEC DO-214AB Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21gram
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SS SS SS SS SS SS SS
32 33 34 35 36 39 310
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
VDC
I(AV)
IFSM
20 30 40 50 60 90 100
3.0
100 70
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 3.0A @ 25oC
VF
0.5
0.75 0.85
@ 100oC
0.4 0.65 0.70
Maximum DC Reverse Current @ TA =25 oC at
Rated DC Blocking Voltage
@ TA=125 oC
IR
0.5
10
5
0.1
0.5
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Storage Temperature Range
R θJL
R θJA
TJ
TSTG
-55 to +125
17
55
-55 to +150
-55 to +150
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
SS
315
150
105
150
0.95
0.80
Units
V
V
V
A
A
V
mA
mA
oC/W
oC
oC
04/05/2007 Rev.1.00
www.SiliconStandard.com
1



SS33
SS32-SS315
RATINGS AND CHARACTERISTIC CURVES (SS32 THRU SS315)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
3
RESISTIVE OR
INDUCTIVE LOAD
SS35-SS315
2 SS32-SS34
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
AT RATED TL
8.3ms Single Half Sine Wave
80 JEDEC Method
60
1
PCB MOUNTED ON 0.6X0.6"
(16X16mm) COPPER PAD AREAS
0
50 60 70 80 90 100 110 120 130 140 150 160
LEAD TEMPERATURE. (oC)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
40
TJ=250C
SS35-SS36
10
SS32-SS34
40
20
0 1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
20
10
TJ=1250C
1
1
SS39-SS310
TJ=750C
0.1
0.1
0.01
0
SS315
PULSE WIDTH=300 S
1% DUTY CYCLE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
1000
TJ=250C
f=1.0MHz
Vsig=50mVp-p
0.01
TJ=250C
SS32-SS34
SS35-SS315
0.001
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
10
100
1
10
0.1
SS32-SS34
SS35-SS36
SS39-SS315
1 10
REVERSE VOLTAGE. (V)
0.1
100
0.01
0.1
1 10
t, PULSE DURATION, (sec)
100
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
04/05/2007 Rev.1.00
www.SiliconStandard.com
2





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