RJK0629DPE

RJK0629DPE 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use Features  VDSS: 60 V  RDS(on): 4.5 m (Max)  ID: 85 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tc = 25C, Tch  150C, L = 100 H 3. Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 I Note2 AP Pch Note3 ch-c Tch Tstg Preliminary Datasheet R07DS1060EJ0200 (Previous: REJ03G1874-0100) Rev.2.00 Apr 09, 2013 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Value 60 20 85 340 85 340 55 100 1.25 150 –55 to +150 (Ta = 25C) Unit V V A A A A A W C/W C C R07DS1060EJ0200 Rev.2.00 Apr 09, 2013 Page 1 of 6 RJK0629DPE Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Bod...