N-Channel Power MOS FET
RJK0628JPE
60 V - 160 A - N Channel MOS FET High Speed Power Switching
Features
For Automotive application AEC-Q101 ...
Description
RJK0628JPE
60 V - 160 A - N Channel MOS FET High Speed Power Switching
Features
For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 2.6 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 5400 pF typ
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4
123
1G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Tch = 25C, Rg 50 3. Tc = 25C 4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID ID (pulse) Note1
I Note3
DR
IDR (pulse) Note1 I Note2
AP
E Note2
AR
Pch Note3 Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance ch-c: 0.781C/W
Preliminary Datasheet
R07DS0336EJ0200 Rev.2.00
Aug 29, 2012
2, 4 D
1. Gate 2. Drain 3. Source 4. Drain
S 3
Value 60
+20 / –5 160 640 160 640 65 362 192 175
–55 to +150
(Ta = 25C)
Unit V V A A A A A mJ W C C
R07DS0336EJ0200 Rev.2.00 Aug 29, 2012
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RJK0628JPE
Electrical Characteristics
Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on...
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