MOS FET. RJK0654DPB Datasheet

RJK0654DPB FET. Datasheet pdf. Equivalent


Part RJK0654DPB
Description N-Channel Power MOS FET
Feature RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching Features  High spee.
Manufacture Renesas
Datasheet
Download RJK0654DPB Datasheet

RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS RJK0654DPB Datasheet
Recommendation Recommendation Datasheet RJK0654DPB Datasheet




RJK0654DPB
RJK0654DPB
60V, 30A, 8.3mnax.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
Low on-resistance
RDS(on) = 6.5 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
Preliminary Datasheet
R07DS1052EJ0200
(Previous: REJ03G1880-0100)
Rev.2.00
Apr 09, 2013
5
D
SSS
123
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel to Case Thermal Resistance
ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L=10uH, Tch = 25C, Rg 50
3. Tc = 25C
Ratings
60
20
30
120
30
30
6.8
55
2.27
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS1052EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6



RJK0654DPB
RJK0654DPB
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Notes: 4. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V(BR)DSS
60
V ID = 10 mA, VGS = 0 V
IGSS — — 0.1 A VGS = 20 V, VDS = 0 V
IDSS — — 1 A VDS = 60 V, VGS = 0 V
VGS(off)
2.0
4.0
V VDS = 10 V, ID = 1 mA
RDS(on) — 6.5 8.3 mID = 15 A, VGS = 10 V Note4
|yfs|
— 39 —
S ID = 15 A, VDS = 10 V Note4
Ciss
— 2000 —
pF VDS = 10 V, VGS = 0 V,
Coss
— 475 —
pF f = 1 MHz
Crss
— 125 —
pF
Rg
— 0.5 —
Qg — 27 — nC VDD = 25 V, VGS = 10 V,
Qgs — 9.0 — nC ID = 30 A
Qgd — 4.5 — nC
td(on)
tr
td(off)
tf
VDF
trr
— 12 — ns VGS = 10 V, ID = 15 A,
— 6.8 — ns VDD 30 V, RL = 2 ,
— 32 — ns Rg = 4.7
— 9.2 — ns
— 0.8 1.1 V IF = 30 A, VGS = 0 V Note4
— 40 — ns IF = 30 A, VGS = 0 V
diF/ dt = 100 A/ s
R07DS1052EJ0200 Rev.2.00
Apr 09, 2013
Page 2 of 6





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