MOS FET. RQJ0204XGDQA Datasheet

RQJ0204XGDQA FET. Datasheet pdf. Equivalent

Part RQJ0204XGDQA
Description Silicon P-Channel MOS FET
Feature RQJ0204XGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 mΩ.
Manufacture Renesas
Datasheet
Download RQJ0204XGDQA Datasheet

RQJ0204XGDQA Silicon P Channel MOS FET Power Switching Featu RQJ0204XGDQA Datasheet
Recommendation Recommendation Datasheet RQJ0204XGDQA Datasheet




RQJ0204XGDQA
RQJ0204XGDQA
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A)
Low drive current
High speed switching
2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “XG”.
Preliminary Datasheet
R07DS0293EJ0500
Rev.5.00
Jan 10, 2014
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
–20
+8 / –12
–1.6
–4.0
–1.6
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0293EJ0500 Rev.5.00
Jan 10, 2014
Page 1 of 7



RQJ0204XGDQA
RQJ0204XGDQA
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
–20
+8
–12
–0.4
1.3
Typ
219
363
1.9
153
37
31
14
33
24
8
2.2
0.5
0.9
–0.85
Max
+10
–10
–1
–1.4
280
510
–1.1
Unit
V
V
V
μA
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
(Ta = 25°C)
Test conditions
ID = –10 mA, VGS = 0
IG = +100 μA, VDS = 0
IG = –100 μA, VDS = 0
VGS = +6 V, VDS = 0
VGS = –10 V, VDS = 0
VDS = –20 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –0.8 A, VGS = –4.5 VNote3
ID = –0.8 A, VGS = –2.5 VNote3
ID = –0.8 A, VDS = –10 VNote3
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –0.8 A
VGS = –4.5 V
RL = 12.5 Ω
Rg = 4.7 Ω
VDD = –10 V
VGS = –4.5 V
ID = –1.6A
IF = –1.6 A, VGS = 0 Note3
R07DS0293EJ0500 Rev.5.00
Jan 10, 2014
Page 2 of 7





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)