Document
RQJ0204XGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A)
• Low drive current • High speed switching • 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “XG”.
Preliminary Datasheet
R07DS0293EJ0500 Rev.5.00
Jan 10, 2014
3 D
G 1. Source 2 2. Gate
3. Drain S 1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation
VDSS
VGSS
ID ID(pulse) Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings –20
+8 / –12 –1.6 –4.0 –1.6 0.8 150
–55 to +150
(Ta = 25°C)
Unit V V A A A W °C °C
R07DS0293EJ0500 Rev.5.00 Jan 10, 2014
Page 1 of 7
RQJ0204XGDQA
Preliminary
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test
Symbol V(BR)DSS V(BR)GSS V(BR)GSS
IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd VDF
Min –20 +8 –12 — — — –0.4 — — 1.3 — — — — — — — — — — —
Typ — — — — — — — 219 363 1.9 153 37 31 14 33 24 8 2.2 0.5 0.9 –0.85
Max — — — +10 –10 –1 –1.4 280 510 — — — — — — — — — — — –1.1
Unit V V V μA μA μA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC V
(Ta = 25°C)
Test conditions ID = –10 mA, VGS = 0 IG = +100 μA, VDS = 0 IG = –100 μA, VDS = 0 VGS = +6 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = –20 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –0.8 A, VGS = –4.5 VNote3 ID = –0.8 A, VGS = –2.5 VNote3 ID = –0.8 A, VDS = –10 VNote3 VDS = –10 V VGS = 0 f = 1 MHz
ID = –0.8 A VGS = –4.5 V RL = 12.5 Ω Rg = 4.7 Ω
VDD = –10 V VGS = –4.5 V ID = –1.6A
IF = –1.6 A, VGS = 0 Note3
R07DS0293EJ0500 Rev.5.00 Jan 10, 2014
Page 2 of 7
Channel Dissipation Pch (W)
RQJ0204XGDQA
Main Characteristics
Maximum Channel Power Dissipation Curve
1
0.8
0.6
0.4
0.2
0 0 50 100 150 Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Drain Current ID (A)
Preliminary
Maximum Safe Operation Area
–100
Operation in this area –10 is limited by RDS(on)
100 μs
1 ms
–1 –0.1
DCPOWpe=1ra10t0imo0nsms
Ta = 25°C
1 Shot Pulse –0.01
–0.01 –0.1
–1
–10 –100
Drain to Source Voltage VDS (V)
Drain Current ID (A)
–10
–7 V
V–T6yVpical
Output
Characteristics
–4.5 V –4
–3.2 V –3.4 V
–3.6 V
–3.0 V
–3.8 V –3
–4.0 V
–2.8 V
–2.6 V
–2 –2.4 V –2.2 V
–1 –2.0 V
Pulse Test Tc = 25°C 0 0 –2 –4
VGS = 0 V –6 –8 –10
Drain to S.