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RQJ0204XGDQA Dataheets PDF



Part Number RQJ0204XGDQA
Manufacturers Renesas
Logo Renesas
Description Silicon P-Channel MOS FET
Datasheet RQJ0204XGDQA DatasheetRQJ0204XGDQA Datasheet (PDF)

RQJ0204XGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “XG”. Preliminary Datasheet R07DS0293EJ0500 Rev.5.00 Jan 10, 2014 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak.

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RQJ0204XGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “XG”. Preliminary Datasheet R07DS0293EJ0500 Rev.5.00 Jan 10, 2014 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings –20 +8 / –12 –1.6 –4.0 –1.6 0.8 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0293EJ0500 Rev.5.00 Jan 10, 2014 Page 1 of 7 RQJ0204XGDQA Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min –20 +8 –12 — — — –0.4 — — 1.3 — — — — — — — — — — — Typ — — — — — — — 219 363 1.9 153 37 31 14 33 24 8 2.2 0.5 0.9 –0.85 Max — — — +10 –10 –1 –1.4 280 510 — — — — — — — — — — — –1.1 Unit V V V μA μA μA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC V (Ta = 25°C) Test conditions ID = –10 mA, VGS = 0 IG = +100 μA, VDS = 0 IG = –100 μA, VDS = 0 VGS = +6 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = –20 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –0.8 A, VGS = –4.5 VNote3 ID = –0.8 A, VGS = –2.5 VNote3 ID = –0.8 A, VDS = –10 VNote3 VDS = –10 V VGS = 0 f = 1 MHz ID = –0.8 A VGS = –4.5 V RL = 12.5 Ω Rg = 4.7 Ω VDD = –10 V VGS = –4.5 V ID = –1.6A IF = –1.6 A, VGS = 0 Note3 R07DS0293EJ0500 Rev.5.00 Jan 10, 2014 Page 2 of 7 Channel Dissipation Pch (W) RQJ0204XGDQA Main Characteristics Maximum Channel Power Dissipation Curve 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Drain Current ID (A) Preliminary Maximum Safe Operation Area –100 Operation in this area –10 is limited by RDS(on) 100 μs 1 ms –1 –0.1 DCPOWpe=1ra10t0imo0nsms Ta = 25°C 1 Shot Pulse –0.01 –0.01 –0.1 –1 –10 –100 Drain to Source Voltage VDS (V) Drain Current ID (A) –10 –7 V V–T6yVpical Output Characteristics –4.5 V –4 –3.2 V –3.4 V –3.6 V –3.0 V –3.8 V –3 –4.0 V –2.8 V –2.6 V –2 –2.4 V –2.2 V –1 –2.0 V Pulse Test Tc = 25°C 0 0 –2 –4 VGS = 0 V –6 –8 –10 Drain to S.


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