MOS FET. RQJ0302NGDQA Datasheet

RQJ0302NGDQA FET. Datasheet pdf. Equivalent

Part RQJ0302NGDQA
Description Silicon P-Channel MOS FET
Feature RQJ0302NGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 138 mΩ.
Manufacture Renesas
Datasheet
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RQJ0302NGDQA
RQJ0302NGDQA
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A)
Low drive current
High speed switching
4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “NG”.
Preliminary Datasheet
R07DS0294EJ0600
Rev.6.00
Jan 10, 2014
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(Pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Ratings
–30
+10 / –20
–2.2
–5
–2.2
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0294EJ0600 Rev.6.00
Jan 10, 2014
Page 1 of 7



RQJ0302NGDQA
RQJ0302NGDQA
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
–30
+10
–20
–1.0
1.2
Typ
138
216
2.1
195
42
29
19
25
30
4.6
4.2
0.7
1.0
–0.9
Max
+10
–10
–1
–2.0
173
303
Unit
V
V
V
μA
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
(Ta = 25°C)
Test conditions
ID = –10 mA, VGS = 0
IG = +100 μA, VDS = 0
IG = –100 μA, VDS = 0
VGS = +8 V, VDS = 0
VGS = –16 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –1.1 A, VGS = –10 VNote3
ID = –1.1 A, VGS = –4.5 VNote3
ID = –1.1 A, VDS = –10 VNote3
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –0.5 A, VGS = –10 V,
RL = 20 Ω, Rg = 4.7 Ω
VDD = –10 V, VGS = –10 V,
ID = –2.2A
IF = –1.5 A, VGS = 0 Note3
R07DS0294EJ0600 Rev.6.00
Jan 10, 2014
Page 2 of 7





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