Silicon P-Channel MOS FET
RQJ0302NGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, I...
Description
RQJ0302NGDQA
Silicon P Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A)
Low drive current High speed switching 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “NG”.
Preliminary Datasheet
R07DS0294EJ0600 Rev.6.00
Jan 10, 2014
3 D
G 1. Source 2 2. Gate
3. Drain S 1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation
VDSS
VGSS
ID ID(Pulse) Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Ratings –30
+10 / –20 –2.2 –5 –2.2 0.8 150
–55 to +150
(Ta = 25°C)
Unit V V A A A W °C °C
R07DS0294EJ0600 Rev.6.00 Jan 10, 2014
Page 1 of 7
RQJ0302NGDQA
Preliminary
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test
Symb...
Similar Datasheet