MOS FET. RQJ0306FQDQA Datasheet

RQJ0306FQDQA FET. Datasheet pdf. Equivalent

Part RQJ0306FQDQA
Description Silicon P-Channel MOS FET
Feature RQJ0306FQDQA Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2..
Manufacture Renesas
Datasheet
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RQJ0306FQDQA
RQJ0306FQDQA
Silicon P Channel MOS FET
Power Switching
Features
Low gate drive
VDSS : –30 V and 2.5 V gate drive
Low drive current
High speed switching
Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Notes: Marking is "FQ".
Preliminary Datasheet
R07DS0298EJ0300
Rev.3.00
Jan 10, 2014
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, Duty cycle 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
–30
+8 / –12
–3
–12
3
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0298EJ0300 Rev.3.00
Jan 10, 2014
Page 1 of 8



RQJ0306FQDQA
RQJ0306FQDQA
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to Source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
–30
+8
–12
–0.4
3.5
Typ
75
120
5.2
510
100
58
18
48
47
13
4.8
0.8
1.8
–0.8
Max
+10
–10
–1
–1.4
95
165
–1.2
Unit
V
V
V
μA
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
(Ta = 25°C)
Test conditions
ID = –10 mA, VGS = 0
IG = +100 μA, VDS = 0
IG = –100 μA, VDS = 0
VGS = +6 V, VDS = 0
VGS = –10 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = -1 mA
ID = –1.5 A, VGS = –4.5 V Note3
ID = –1.5 A, VGS = –2.5 V Note3
ID = –1.5 A, VDS = –10 V Note3
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –1.5 A
VGS = –4.5 V
RL = 6.7 Ω
Rg = 4.7 Ω
VDD = –10 V
VGS = –4.5 V
ID = –3.0 A
IF = –3.0 A, VGS = 0 Note3
R07DS0298EJ0300 Rev.3.00
Jan 10, 2014
Page 2 of 8





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