RQJ0601DGDQS

RQJ0601DGDQS Silicon P Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.4 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “DG”. REJ03G1266-0300 Rev.3.00 Jun 05, 2006 2, 4 D 1. Gate 1 G 2. Drain 3. Source 4. Drain S 3 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note1 (pulse) Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 1 s, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings –60 +10 / –20 –2.8 –4.2 –2.8 1.5 5 150 –55 to +150 (Ta = 25°C) Unit V V A A A W W °C °C Rev.3.00 Jun 05, 2006 page 1 of 6 RQJ0601DGDQS Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS +10 — — V IG = +100 µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS –20 — — V IG = –100 µA, VDS = 0 Gate to source leak current IGSS — — +10 µA VGS = +8 V, VDS = 0 Gate to source leak current IGSS — — –10 µA VGS = –16 V, VDS = 0 Drain to source leak current IDSS — — ...