RQK2501YGDQA

RQK2501YGDQA Silicon N Channel MOS FET Power Switching Features High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Preliminary Datasheet R07DS0312EJ0400 Rev.4.00 Jan 10, 2014 3 D 2 G S 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse) Note1 Body - drain diode reverse drain current Channel dissipation IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) Ratings 250 ±10 0.4 1.6 0.4 0.8 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0312EJ0400 Rev.4.00 Jan 10, 2014 Page 1 of 8 RQK2501YGDQA Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward ...