Silicon N-Channel MOS FET
RQK2501YGDQA
Silicon N Channel MOS FET Power Switching
Features
• High drain to source voltage and Low gate drive VDSS :...
Description
RQK2501YGDQA
Silicon N Channel MOS FET Power Switching
Features
High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive
Low drive current High speed switching Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Preliminary Datasheet
R07DS0312EJ0400 Rev.4.00
Jan 10, 2014
3 D
2 G
S 1
1. Source 2. Gate 3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current Drain peak current
ID ID(pulse) Note1
Body - drain diode reverse drain current Channel dissipation
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings 250 ±10 0.4 1.6 0.4 0.8 150
–55 to +150
(Ta = 25°C)
Unit V V A A A W °C °C
R07DS0312EJ0400 Rev.4.00 Jan 10, 2014
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RQK2501YGDQA
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward ...
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