Document
SMD Type
Fast Recovery diodes RS1AFH ~ RS1MFH
Diodes
■ Features
● Low leakage current ● Excellent stability ● Guaranteed avalanche energy absorption capability ● Glass passivated
● High maximum operating temperature
12
PIN DESCRIPTION 1 Cathode 2 Anode Weight:17.6mg,0.00062 o z Simplified outline SOD-123FH
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
RS1A RS1B RS1D RS1G RS1J FH FH FH FH F H
RS1K RS1M FH FH
Unit
Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage Maximum DC Blocking Voltage Averaged Forward Current.TT=110℃
Peak Forward Surge Current Tj=25℃,VR=VRRMMax
VRRM 50 100 200 400 600 800 1000 VRSM 35 70 140 280 420 560 700 V
VR 50 100 200 400 600 800 1000
IFAV
1
A
IFSM
25
Thermal Resistance From Junction to Ambient (Note.1) Rthj-a
(Note.2)
100 150 K/W
Thermal Resistance Junction to Tie-Point
Rthj-tp
27
Junction Temperature Storage Temperature
Tj Tstg
150 -50 to 150
℃
Note.1 Device mounted on Al 2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥ 35 mm. Note.2 Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥ 40 mm. For more
information please refer to the ‘General Part of associated Handbook’.
■ Electrical Characteristics Ta = 25℃
Parameter Forward Votalge Maximum DC Reverse Current
Reverse Recovery Time Diode Capacitance
Symbol
Test Conditions
Min Typ Max Unit
VF IF=1A
1.3 V
VR=VRRMMax IR
VR=VRRMMax ,T J =125℃
5 uA
50
IF = 0.5 A , IR = 1A, RS1A to RS1J trr
IF = 0.5 A,IR=0.25A, RS1K and RS1M
250 ns
300
Cd VR=4V, f=1MHz
7 pF
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SMD Type
■ Typical Characterisitics
Fast Recovery diodes RS1AFH ~ RS1MFH
Diodes
handbook, h2alfpage IF(AV) (A)
1.5
1
0.5
0 0 40 80
VR = VRRMmax; δ = 0.5; a = 1.57.
120
160 200 Ttp (°C)
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
102
handbook, halfpage
IF (A)
10
1
10−1
10−2
10−3 0 123 VF (V)
Tj = 25 ° C.
Fig.4 Forward current as a function of forward voltage; typical values.
handboo2k,0h0alfpage Tj (°C) 160
120
80
DG 40
JK M
0 0 400 800 VR (V) 1200
Fig.3 Maximum permissible junction temperature as a function of reverse voltage.
102 handbooIRk, halfpage
(µA)
10
Tj = 125 °C
1
10−1 10−2
Tj = 25 °C
10−3 0 20 40 60 80 100 VR (%VRmax)
Fig.5 Reverse current as a function of reverse voltage; typical values.
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SMD Type
■ Typical Characterisitics
102
handbook, halfpage
Fast Recovery diodes RS1AFH ~ RS1MFH
102
handbook, halfpage
Cd Zth j-tp (pF) (K/W)
10 10
Diodes
1 10−2
10−1
f = 1 MHz; Tj = 25 °C.
1
10 102 VR (V)
Fig.6 Diode capacitance as a function of reverse voltage; typical values.
1 1
10 102 103 tp (ms) 104
Fig.7 Transient thermal impedance as a function of pulse width.
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SMD Type
Fast Recovery diodes RS1AFH ~ RS1MFH
■ Typical Application Plastic surface mounted package; 2 leads
∠A LL R O U N D
Diodes
C E
A e
HE V M A D
A
e E
pad pad
bottom d
UNIT
ACD d E
max 1.08 0.16 2.9 3.3 1.8 mm
min 0.95 0.14 2.6 3.0 1.5
max 42.5 6.3 mil .
min 37.4 5.5
114 130 102 118
70 60
e HE 1.0 3.8 0.7 3.5 39 150 28 138
∠
5°
1.1 (43)
2.0 (79)
1.1 (43)
1.8 (71) 1.1 (43)
0.8 (32)
0.8 (32)
Uni
t:
mm (mil)
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.