Barrier Diode. SCD310H Datasheet

SCD310H Diode. Datasheet pdf. Equivalent

Part SCD310H
Description Schottky Barrier Diode
Feature ZOWIE Schottky Barrier Diode SCD32H THRU SCD310H FEATURES * Halogen - free type * Lead free produc.
Manufacture Zowie Technology
Datasheet
Download SCD310H Datasheet

ZOWIE Schottky Barrier Diode SCD32H THRU SCD310H FEATURES SCD310H Datasheet
Recommendation Recommendation Datasheet SCD310H Datasheet




SCD310H
ZOWIE
Schottky Barrier Diode
SCD32H THRU SCD310H
FEATURES
* Halogen - free type
* Lead free product , compliance to RoHs
* Lead less chip form , no lead damage
* Lead-free solder joint , no wire bond & lead frame
* Low power loss , High efficiency
* High current capability , low VF
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
APPLICATION
* Switching mode power supply applications
* Portable equipment battery applications
* High frequency rectification
* DC / DC Converter
* Telecommunication
OUTLINE DIMENSIONS
Case : SCD-2010
4.5 ± 0.1
0.95 ± 0.2
JEDEC : SMA
DO-214AC
(20V~100V / 3.0A)
Unit : mm
0.05
0.50
0.95 ± 0.2
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.02 gram
PACKING
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 4 reels per box
* 6 boxes per carton
MARKING
Cathode mark
Amps class
Series code
SCD
3.
Voltage
class
Halogen - free type
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
Electrical characteristics (Ta = 25 oC)
ITEM
Forward voltage (NOTE 1)
Symbol
Conditions
VRRM
IF(AV)
IFSM
Tj
TSTG
8.3ms single half sine-wave
Rating
SCD32H SCD34H SCD36H SCD310H
20 40 60 100
3.0
80
-55 to +125
-55 to +150
-55 to +150
Unit
V
A
A
oC
oC
Symbol
Conditions
IF = 1.0A
IF = 3.0A
VF
IF = 1.0A
IF = 3.0A
Type
SCD32H
/
SCD34H
SCD36H
Min.
-
-
-
-
Typ.
0.37
0.46
0.42
0.58
Max.
-
0.50
-
0.70
Unit
V
V
IF = 1.0A
IF = 3.0A
SCD310H
Repetitive peak reverse current
IRRM
VR = Max. VRRM , Ta = 25 oC
Junction capacitance
Cj VR = 4V, f = 1.0 MHz
Thermal resistance
Rth(JA)
Rth(JL)
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
-
-
-
-
-
-
0.58
0.75
0.02
120
55
17
-
0.85
0.20
-
-
-
V
mA
pF
oC/W
oC/W
REV. 0
2007/12



SCD310H
ZOWIE
SCD32H THRU SCD310H
(20V~100V / 3.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
3.0
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
2.0
SCD36H & SCD310H
SCD32H & SCD34H
1.0
0
0 50 70 90 110 130 150 170
LEAD TEMPERATURE, oC
80
70
60
50
40
30
20
10
0
1
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
8.3ms Single Half Sine-Wave
(JEDEC Method)
10
NUMBER OF CYCLES AT 60Hz
100
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
1.00
0.10
10
1.0
0.10
o
TJ=100 C
0.01
0.001
0
Ta=25oC
SCD32H~34H
SCD36H
SCD310H
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FORWARD VOLTAGE, (V)
0.01
o
TJ=25 C
.001
0 20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
o
TJ = 25 C
f=1.0MHz
Vsig=50mVP-P
100
10
.1
1.0 10
REVERSE VOLTAGE, VOLTS
100
REV. 0
2007/12





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