DIP Type
Schottky Diodes SB320 ~ SB3200
Diodes
■ Features
● Metal-Semiconductor junction with guard ring ● Epitaxial ...
DIP Type
Schottky Diodes SB320 ~ SB3200
Diodes
■ Features
● Metal-Semiconductor junction with guard ring ● Epitaxial construction
● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0
DO-27 (DO-201AD)
0.210 (5.3) 0.190 (4.8)
DIA.
1.0 (25.4) MIN.
0.375 (9.5) 0.285 (7.2)
0.052 (1.32)
0.048 (1.22) DIA.
1.0 (25.4) MIN.
Dimensions in inches and (millimeters)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage RMS Voltage Maximum DC Blocking Voltage Forward Voltage @ 3A Averaged Forward Current Peak Forward Surge Current @ 8.3ms Maximum DC Reverse Current Ta=25℃
Ta=100℃ Typical Junction Capacitance Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature
Symbol
SB 320
SB 330
SB 340
SB 350
SB 360
SB SB SB SB 380 3100 3150 3200
Unit
VRRM VRMS VDC
VF
20 30 40 50 60 80 100 150 200
14 21 28 35 42 56 70 105 140
20 30 40 50 60 80 100 150 200
0.55
0.7
0.85
0.87 0.9
V
IFAV
3
A
IFSM
80
0.5 IR
10
0.2 mA
5
Cj 180
150 110 100 80 pF
RthJA RthJC
60 ℃/W
15
Tj Tstg
125 -55 to 150
℃
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DIP Type
Diodes
Schottky Diodes SB320 ~ SB3200
■ Typical Characterisitics
FIG. 1-TYPICAL FORWARD CURRENT DERATING CURVE
5.0 4.0 3.0 2.0 1.0
IG. 2-TYPICAL FORWARD CHARACTERISTICS
100.00 10.00
SB320~SB340 SB350~SB360 SB380~SB3100 SB3150 SB3200
1.00
0.10
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT,(A)
...
