BARRIER RECTIFIER. SB3150 Datasheet

SB3150 RECTIFIER. Datasheet pdf. Equivalent

Part SB3150
Description SCHOTTKY BARRIER RECTIFIER
Feature DO-201AD 0.220(5.6) 0.197(5.0) DIA. 1.0 (25.4) MIN. 0.375 (9.50) 0.285(7.20) SB320 THRU SB3200 SC.
Manufacture MDD
Datasheet
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SB3150
DO-201AD
0.220(5.6)
0.197(5.0)
DIA.
1.0 (25.4)
MIN.
0.375 (9.50)
0.285(7.20)
SB320 THRU SB3200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.052 (1.3)
0.048 (1.2)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.04 ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SB
320
SB
330
SB
340
SB
350
SB
360
SB
370
VRRM
VRMS
VDC
20 30 40 50 60 70
14 21 28 35 42 49
20 30 40 50 60 70
SB
380
SB
390
SB
3B0
SB
3150
SB
3200
UNITS
80 90 100 150 200 VOLTS
56 63 70 105 140 VOLTS
80 90 100 150 200 VOLTS
I(AV) 3.0
Amps
IFSM
VF
IR
CJ
RθJA
TJ,
TSTG
80.0
0.55 0.70
0.85
0.5
20.0 10.0
250
-65 to +125
160
40.0
-65 to +150
-65 to +150
Amps
0.95
0.2
2.0
Volts
mA
pF
C/W
C
C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC



SB3150
RATINGS AND CHARACTERISTIC CURVES SB320 THRU SB3200
FIG. 1- FORWARD CURRENT DERATING CURVE
3
2.4
1.8
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
1.2
0.6 SB320-SB360
SB370-SB3200
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
1
0.1
0.01
0.2
0.4
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
SB320-SB340
SB350-SB360
SB370-SB3150
SB3200
0.6 0.8
1.0 1.1
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000
1000
SB320-SB340
SB350-SB3200
100
TJ=25 C
10
0.1
1.0 10
REVERSE VOLTAGE,VOLTS
100
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
80
64
48
32
16 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=100 C
1
TJ=75 C
0.1
0.01 TJ=25 C
0.001 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100
MDD ELECTRONIC





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